SSP7200N 3 A, 200 V, RDS(ON) 400 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones PACKAGE INFORMATION Package MPQ Leader Size SOP-8PP 3K 13’ inch REF. A B C D E F G L Millimeter Min. Max. 0.85 1.00 5.3 BSC. 0.15 0.25 3.8 BCS. 6.05 BCS. 0.03 0.30 4.35 BCS. 0.40 0.70 REF. θ b c d e f g Millimeter Min. Max. 0° 10° 5.2 BCS 0.30 0.50 1.27BSC 5.55 BCS. 0.10 0.40 1.2 BCS. ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 200 V Gate-Source Voltage VGS 20 V TA=25°C Continuous Drain Current 1 TA=70°C ID 3 2.4 A Pulsed Drain Current 2 IDM 50 A Continuous Source Current (Diode Conduction) 1 IS 2.3 A Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 5.0 3.2 -55 ~ 150 W °C Thermal Resistance Rating Maximum Junction to Ambient 1 Notes 1. 2. t≦10 sec Steady State RθJA 25 65 °C / W Surface Mounted on 1” x 1” FR4 Board. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 18-Sep-2013 Rev. C Any changes of specification will not be informed individually. Page 1 of 2 SSP7200N 3 A, 200 V, RDS(ON) 400 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= 12V Zero Gate Voltage Drain Current IDSS - - 1 - - 5 40 - - - - 400 - - 450 gFS - 40 - S VDS= 15V,,ID = 3A VSD - 0.7 - V IS= 2.3A, VGS= 0V Dynamic 2 On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) Total Gate Charge Qg - 15 - Gate-Source Charge Qgs - 3 - Gate-Drain Charge Qgd - 5 - Turn-On Delay Time Td(ON) - 15 - Tr - 10 - Td(OFF) - 54 - Tf - 26 - Rise Time Turn-Off Delay Time Fall Time μA A mΩ VDS = 160V, VGS= 0V VDS = 160V, VGS= 0V,TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID = 3A VGS= 4.5V, ID = 2.8A nC ID= 6A VDS= 15V VGS= 4.5V nS ID= 1A, VDD= 15V VGEN= 10V RL= 6Ω Notes 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 18-Sep-2013 Rev. C Any changes of specification will not be informed individually. Page 2 of 2