SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. A L 3 3 C B Top View 1 FEATURES 1 Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. K 2 E 2 D F G REF. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ Leader Size SC-59 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±12 V Continuous Drain Current 1 TA=25°C TA=70°C ID 3.5 2.8 A Pulsed Drain Current 2 IDM 20 A Continuous Source Current (Diode Conduction) 1 IS 1.9 A Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range PD TJ, TSTG 1.3 0.8 -55 ~ 150 W °C Thermal Resistance Rating Maximum Junction to Ambient 1 t≦10 sec Steady-State RθJA 100 166 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SMG2334NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - ±10 nA VDS =0, VGS= ±12V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 7 - - - - 58 - - 82 gFS - 10 - S VDS=10V,,ID =2.8A VSD - 0.69 - V IS=1A, VGS=0 pF VDS=15 V, VGS=0, f=1 MHz nC ID=2.8A VDS=10V VGS=4.5V nS ID=2.8A, VDS=10V VGEN=4.5V RL=3.6Ω, RGEN=6Ω On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) Dynamic Ciss 413 Output Capacitance Coss 76 Reverse Transfer Capacitance Crss 67 Total Gate Charge Qg - 6 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 1.9 - Turn-On Delay Time Td(ON) - 8 - Tr - 21 - Td(OFF) - 49 - Tf - 26 - Turn-Off Delay Time Fall Time A mΩ VDS =16V, VGS=0 VDS =16V, VGS=0, TJ=55°C VDS =5V, VGS=4.5V VGS=4.5V, ID =2.8A VGS=2.5V, ID =2.4A 2 Input Capacitance Rise Time μA Notes 1. Pulse test：PW≦300 us duty cycle≦2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SMG2334NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SMG2334NE Elektronische Bauelemente 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. B Any changes of specification will not be informed individually. Page 4 of 4