SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 FEATURES 1 Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. -30 RDS(on) (m 57@VGS= -10V 89@VGS= -4.5V K E 2 D F G REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 2 A B C D E F ID(A) -3.6 -2.8 Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ LeaderSize SC-59 3K 7’ inch ESD Protection Diode 2KV ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS -30 ±25 -3.6 -2.9 -10 0.4 1.25 0.8 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t ≦ 5 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 100 150 A A A W °C °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2343PE -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBO MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -0.8 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±8V Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current A ID(ON) -2 - - - - 57 - - 89 Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = -24V, VGS= 0V VDS = -24V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -4.5V VGS= -10V, ID = -3.6A VGS= -4.5V, ID = -2.8A Forward Transconductance A gFS - 2 - S VDS= -5V,,ID = -3.6A Diode Forward Voltage VSD - -0.7 - V IS= -0.4A, VGS= 0V Dynamic b Total Gate Charge Qg - 64 - Gate-Source Charge Qgs - 1.9 - Gate-Drain Charge Qgd - 2.5 - Turn-On Delay Time Td(on) - 10 - Tr - 2.8 - Td(off) - 53.6 - Tf - 46 - Rise Time Turn-Off Delay Time Fall Time ID= -3.6A nC VDS= -10V VGS= -5V ID= -1A, VDS= -15V nS VGEN= -10V RG= 50Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2343PE Elektronische Bauelemente -3.6 A, -30 V, RDS(ON) 57 m P-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 12-Nov-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4