SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP DESCRIPTION B These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. D C θ e FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8PP saves board space. Fast switching speed. High performance trench technology. E A b d g F G PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -100 RDS(on) (m 95@VGS= -10V 125@VGS= -4.5V REF. ID(A) -6.0 -5.2 A B C D E F G Drain Millimeter Min. Max. 1.00 1.10 5.70 5.80 0.20 0.30 3.61 3.98 5.40 6.10 0.08 0.20 3.60 3.99 REF. θ b d e g Millimeter Min. Max. 0° 12° 0.33 0.51 1.27BSC 1.35 1.75 1.10 - Gate Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C B Pulsed Drain Current Continuous Source Current (Diode Conduction) A SYMBOL RATING UNIT VDS VGS -100 ±20 -6.0 -4.9 ±50 -2.1 5.0 3.2 -55 ~ 150 V V ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦10 sec Maximum Junction to Ambient A RθJA Steady-State Power Dissipation A 25 65 A A A W °C °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 30-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSP7411P -6 A, -100 V, RDS(ON) 95 m P-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Static Drain-Source Breakdown Voltage V(BR)DSS -30 - - V VGS = 0V, ID = -250μA VGS(th) -1 - - V VDS = VGS, ID = -250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS - - -1 - - -5 On-State Drain Current A ID(ON) -50 - - - - 95 - - 125 Gate-Threshold Voltage Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = -80V, VGS= 0V VDS = -80V, VGS= 0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID = -6.0A VGS= -4.5V, ID = -5.2A Forward Transconductance A gFS - 29 - S VDS= -15V,,ID = -6A Diode Forward Voltage VSD - -0.8 - V IS= 2.5A, VGS= 0V Dynamic b Total Gate Charge Qg - 25 - Gate-Source Charge Qgs - 11 - Gate-Drain Charge Qgd - 17 - Turn-On Delay Time Td(ON) - 15 - Tr - 13 - Td(OFF) - 100 - Tf - 54 - Rise Time Turn-Off Delay Time Fall Time ID= -6A nC VDS= -15V VGS= -5V ID= -1A, VDD= -15V nS VGEN= -10V RL= 6Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 30-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2