SECOS SSD30P06-45D

SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES




Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
A
B
C
D
GE
PRODUCT SUMMARY
VDS(V)
-60
PRODUCT SUMMARY
RDS(on) m(
[email protected]= -10V
[email protected]= -4.5V
K
ID(A)
28
24

M
REF.
Gate
A
B
C
D
E
F
G
H

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
a
b
Continuous Source Current (Diode Conduction)
Total Power Dissipation
N
O
P
J
Drain

Continuous Drain Current
HF
a
a
Operating Junction and Storage Temperature Range
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
UNIT
VDS
-60
V
VGS
±20
V
ID @TA=25℃
61
A
IDM
±40
A
IS
-30
A
PD @TA=25℃
50
W
TJ, TSTG
-55 ~ 175
°C
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.0
°C / W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
Gate-Body Leakage
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-10
On-State Drain Current a
ID(on)
-20
-
-
-
-
49
-
-
60
VDS= VGS, ID = -250 μA
nA
μA
A
VDS = 0V, VGS= ±20V
VDS= -48V, VGS= 0V
VDS= -48V, VGS=0V, TJ=55°C
VDS = -5V, VGS= -10V
VGS= -10V, ID= -28A
Drain-Source On-Resistance a
RDS(ON)
Forward Transconductance a
gfs
-
8
-
S
VDS= -15V, ID= -28A
Diode Forward Voltage
VSD
-
-
-1.2
V
IS= -2.5 A, VGS= 0 V
mΩ
VGS= -4.5V, ID= -24A
Dynamic b
Total Gate Charge
Qg
-
18
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Charge
Qgd
-
2
-
Turn-on Delay Time
Td(on)
-
8
-
Tr
-
10
-
Td(off)
-
35
-
Tf
-
12
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS = -30 V
VGS = -4.5 V
ID = -28 A
nS
VDD= -30 V
ID= -1 A
VGEN = -10 V
RL= 30 
RG= 6 
Notes
a. Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVE
15
15
VGS = -10V
T A = -55oC
-4.5V
ID - Drain Current (A)
ID - Drain Current (A)
25oC
12
12
9
6
125oC
9
6
3
3
0
0
0
1
2
3
4
1
5
2
3
4
5
V GS - Gate-to-Source Voltage (V)
V DS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
2400
C - Capacitance (pF)
rDS(ON) - Normalized On-Resistance
1.8
1.6
1.4
-4.5V
1.2
-10V
1
2000
1600
Ciss
1200
Coss
800
Crss
400
0
0
0.8
0
2
4
6
8
5
10
20
25
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
2
rDS(ON) - On-Resistance Normalized
-10
-8
Vgs Voltage ( V )
15
10
-6
-4
-2
VGS = -10V
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0
0
6
12
18
24
Qg, Charge (nC)
Gate Charge
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
30
36
-50
-25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
On-Resistance vs. Junction Temperature
Any changes of specification will not be informed individually.
Page 3 of 4
SSD30P06-45D
P-Ch Enhancement Mode Power MOSFET
28A, -60V, RDS(ON) 49mΩ
Elektronische Bauelemente
CHARACTERISTIC CURVE
0.4
10
rDS(ON) - On-Resistance (OHM)
IS - Source Current (A)
100
T A = 125oC
o
25 C
1
0.1
0.01
0.001
0.3
0.2
0.1
0
0
0.2
0.4
0.6
0.8
1
1.2
2
1.4
4
V SD - Source-to-Drain Voltage (V)
6
8
10
V GS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
1.9
ID = -250μA
V GS(th), Variance (V)
1.8
40
1.7
30
1.6
1.5
20
1.4
1.3
10
1.2
1.1
-50
-25
0
25
50
75
100
125
0
0.001
150
0.01
o
0.1
1
10
100
1000
T i me ( sec)
TJ - Temperature ( C)
Threshold Voltage
Single Pulse Power
1
D = 0.5
Normalized Effective Transient Thermal Impedance
RθJA(t) = r(t) + R θJA
R θJA = 125 oC/W
0.2
0.1
0.1
P(pk)
TJ - TA = P * R θJA(t)
Duty Cycle, D = t1 / t2
t1
0.05
0.02
0.01
t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
http://www.SeCoSGmbH.com/
16-Aug-2010 Rev.A
Any changes of specification will not be informed individually.
Page 4 of 4