SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframce DPAK saves board space Fast switching speed High performance trench technology A B GE PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 38 @VGS= 10V 50 @VGS= 4.5V C D K ID(A) M 30 26 HF N O P J Drain Gate REF. A B C D E F G H Source Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDS 60 V VGS ±20 V ID @TC=25℃ 19 A IDM 40 A IS 30 A PD @TC=25℃ 50 W TJ, TSTG -55 ~ 175 °C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSD30N06-39D N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) 1.0 - - IGSS - - ±100 - - 1 - - 25 34 - - - - 38 - - 50 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(ON) Drain-Source On-Resistance a RDS(ON) V VDS = VGS, ID = 250μA nA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V μA A mΩ VDS= 48V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 30A VGS= 4.5V, ID= 26A Forward Transconductance a gfs - 22 - S VDS= 15V, ID= 30A Diode Forward Voltage VSD - 1.1 - V IS= 24A, VGS = 0V Dynamic b Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.4 - Gate-Drain Change Qgd - 2.6 - Turn-on Delay Time Td(on) - 11 - Tr - 8 - Td(off) - 19 - Tf - 6 - Rise Time Turn-off Delay Time Fall Time ID= 30 A nC VDS= 15 V VGS= 4.5 V VDD= 25 V I = 30 A nS RD = 25 L VGEN= 10 V Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD30N06-39D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 30A, 60V, RDS(ON) 38 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ 30-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4