SSD40P04-20DE -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES A B Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe TO-252 saves board space. Fast Switch Speed. High performance trench technology. C D GE K APPLICATION M DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. REF. A B C D E F G H PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13 inch HF N O P J Millimeter Min. Max. 6.35 6.80 5.20 5.50 2.15 2.40 0.45 0.58 6.8 7.5 2.40 3.0 5.40 6.25 0.64 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 0.90 0.50 1.1 0.9 1.65 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current @TA=25°C 2 Continuous Source Current (Diode Conduction) Total Power Dissipation @TA=25°C 1 1 Operating Junction and Storage Temperature Range Symbol Ratings Unit VDS -40 V VGS ±20 V ID -36 A IDM -40 A IS -30 A PD 50 W TJ, TSTG -55 ~ 175 °C RθJA 50 °C / W RθJC 3 °C / W Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 2-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSD40P04-20DE -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Min. Symbol Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) -1 - - V VDS= VGS, ID = -250µA Gate-Body Leakage IGSS - - ±100 nA VDS =0, VGS= ±25V - - -1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance µA 1 1 Diode Forward Voltage RDS(ON) - - -5 -41 - - - - 30 VDS = -5V, VGS= -10V VGS= -10V, ID= -36A - 40 gfs - 31 - S VDS= -15V, ID= -36A VSD - -0.7 VGS= -4.5V, ID= -29A - V IS= -41A, VGS=0 2 Qg - 13.9 30 Gate-Source Charge Qgs - 5.2 20 Gate-Drain Charge Qgd - 5.8 20 Input Capacitance Ciss - 1583 4000 Output Capacitance Coss - 278 600 Reverse Transfer Capacitance Crss - 183 400 Turn-on Delay Time Td(on) - 15 - Tr - 12 - Td(off) - 62 - Tf - 46 - Fall Time A - Total Gate Charge Turn-off Delay Time VDS= -24V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS= -24V, VGS=0 nC VDS= -15V VGS= -4.5 V ID= -36A pF VDS= -15V, VGS=0, f=1MHz nS VDD= -15V ID= -41A VGEN = -10 V RL=15Ω RG=6Ω Notes: 1. Pulse test：Pulse width ≦ 300 µs, duty cycle ≦ 2％. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 2-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 2-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD40P04-20DE Elektronische Bauelemente -36A , -40V , RDS(ON) 30mΩ P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 2-Dec-2011 Rev. A Any changes of specification will not be informed individually. Page 4 of 4