SSD70N04-06D 75A, 40V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B C D FEATURES GE Low RDS(on) provides higher efficiency and extends battery life. Miniature TO-252 surface mount package saves board space. High power and current handling capability. Low side high current DC-DC converter applications. K M REF. A B C D E F G H PACKAGE INFORMATION Package MPQ LeaderSize TO-252 2.5K 13’ inch HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 REF. J K M N O P Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Operating Junction and Storage Temperature Range Symbol Ratings Unit VDS 40 V VGS ±20 V ID @TC=25℃ 75 A IDM 40 A IS 30 A PD @TC=25℃ 50 W TJ, TSTG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes： 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev.A Any changes of specification will not be informed individually. Page 1 of 2 SSD70N04-06D 75A, 40V, RDS(ON) 6 mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Threshold Voltage VGS(th) 1.0 - - V VDS=VGS, ID=250μA Gate-Body Leakage IGSS - - ±100 nA VDS=0V, VGS=20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 On-State Drain Current 1 ID(on) 34 - - - - 6 - - 8 μA A VDS=32V, VGS=0V VDS=32V, VGS=0V, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=75A Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 gfs - 22 - S VDS=15V, ID=75A Diode Forward Voltage VSD - 1.1 - V IS= 34A, VGS= 0V mΩ VGS=4.5V, ID=65A Dynamic 2 Total Gate Charge Qg - 4.0 - Gate-Source Charge Qgs - 1.1 - Gate-Drain Charge Qgd - 1.4 - Turn-on Delay Time Td(on) - 16 - Tr - 5 - Td(off) - 23 - Tf - 3 - TRR - 50 - Rise Time Turn-off Delay Time Fall Time Source-Ddrain Reverse Recovery Time nC nS VDS= 15V VGS= 4.5V ID= 75A VDD=25V ID=34 A VGEN=10V RL=25 IF=34A, Di/Dt =100A/uS Notes： 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jan-2011 Rev.A Any changes of specification will not be informed individually. Page 2 of 2