SECOS SSD20P06-135D

SSD20P06-135D
P-Ch Enhancement Mode Power MOSFET
16A, -60V, RDS(ON) 135mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
TO-252(D-Pack)
FEATURES




Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe DPAK saves board space.
Fast switching speed.
High performance trench technology..
A
B
C
D
GE
PRODUCT SUMMARY
VDS(V)
-60
PRODUCT SUMMARY
RDS(on) m(
135@VGS= -10V
190@VGS= -4.5V
K
ID(A)
16
14

M
REF.
Gate
A
B
C
D
E
F
G
H

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
a
b
Continuous Source Current (Diode Conduction)
Total Power Dissipation
N
O
P
J
Drain

Continuous Drain Current
HF
a
a
Operating Junction and Storage Temperature Range
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
UNIT
VDS
-60
V
VGS
±20
V
ID
16
A
IDM
±40
A
IS
-15
A
PD
50
W
TJ, TSTG
-55 ~ 175
°C
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.0
°C / W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 4
SSD20P06-135D
P-Ch Enhancement Mode Power MOSFET
16A, -60V, RDS(ON) 135mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
Gate-Body Leakage
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-10
On-State Drain Current a
ID(on)
-20
-
-
-
-
135
-
-
190
VDS= VGS, ID = -250 μA
nA
μA
A
VDS = 0V, VGS= ±20V
VDS= -48V, VGS= 0V
VDS= -48V, VGS=0V, TJ=55°C
VDS = -5V, VGS= -10V
VGS= -10V, ID= -28A
Drain-Source On-Resistance a
RDS(ON)
Forward Transconductance a
gfs
-
8
-
S
VDS= -15V, ID= -28A
Diode Forward Voltage
VSD
-
-
-1.2
V
IS= -2.5 A, VGS= 0 V
mΩ
VGS= -4.5V, ID= -14A
Dynamic b
Total Gate Charge
Qg
-
18
-
Gate-Source Charge
Qgs
-
5
-
Gate-Drain Charge
Qgd
-
2
-
Input Capacitance
Ciss
-
570
-
Output Capacitance
Coss
-
80
-
Reverse Transfer Capacitance
Crss
-
40
-
Turn-on Delay Time
Td(on)
-
8
-
Tr
-
10
-
Td(off)
-
35
-
Tf
-
12
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS = -30 V
VGS = -4.5 V
ID = -28 A
pF
VDS = -15 V
VGS = 0 V
f = 1MHz
nS
VDD= -30 V
ID= -1 A
VGEN = -10 V
RL= 30 
RG= 6 
Notes
a. Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 4
SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, RDS(ON) 135mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev.B
Any changes of specification will not be informed individually.
Page 3 of 4
SSD20P06-135D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
16A, -60V, RDS(ON) 135mΩ
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev.B
Any changes of specification will not be informed individually.
Page 4 of 4