SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. TO-252(D-Pack) FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe DPAK saves board space. Fast switching speed. High performance trench technology.. A B C D GE PRODUCT SUMMARY VDS(V) -60 PRODUCT SUMMARY RDS(on) m( 135@VGS= -10V 190@VGS= -4.5V K ID(A) 16 14 M REF. Gate A B C D E F G H Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Total Power Dissipation N O P J Drain Continuous Drain Current HF a a Operating Junction and Storage Temperature Range Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 UNIT VDS -60 V VGS ±20 V ID 16 A IDM ±40 A IS -15 A PD 50 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes： a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev.B Any changes of specification will not be informed individually. Page 1 of 4 SSD20P06-135D P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) -1 - - Gate-Body Leakage IGSS - - ±100 Zero Gate Voltage Drain Current IDSS - - -1 - - -10 On-State Drain Current a ID(on) -20 - - - - 135 - - 190 VDS= VGS, ID = -250 μA nA μA A VDS = 0V, VGS= ±20V VDS= -48V, VGS= 0V VDS= -48V, VGS=0V, TJ=55°C VDS = -5V, VGS= -10V VGS= -10V, ID= -28A Drain-Source On-Resistance a RDS(ON) Forward Transconductance a gfs - 8 - S VDS= -15V, ID= -28A Diode Forward Voltage VSD - - -1.2 V IS= -2.5 A, VGS= 0 V mΩ VGS= -4.5V, ID= -14A Dynamic b Total Gate Charge Qg - 18 - Gate-Source Charge Qgs - 5 - Gate-Drain Charge Qgd - 2 - Input Capacitance Ciss - 570 - Output Capacitance Coss - 80 - Reverse Transfer Capacitance Crss - 40 - Turn-on Delay Time Td(on) - 8 - Tr - 10 - Td(off) - 35 - Tf - 12 - Rise Time Turn-off Delay Time Fall Time nC VDS = -30 V VGS = -4.5 V ID = -28 A pF VDS = -15 V VGS = 0 V f = 1MHz nS VDD= -30 V ID= -1 A VGEN = -10 V RL= 30 RG= 6 Notes a. Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev.B Any changes of specification will not be informed individually. Page 2 of 4 SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev.B Any changes of specification will not be informed individually. Page 3 of 4 SSD20P06-135D Elektronische Bauelemente P-Ch Enhancement Mode Power MOSFET 16A, -60V, RDS(ON) 135mΩ CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 25-Aug-2010 Rev.B Any changes of specification will not be informed individually. Page 4 of 4