SECOS SSD40P04-20D

SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize high cell density process.
Low RDS(on) assures minimal power loss and conserves energy, making this
device ideal for use in power management circuitry. Typical applications
are PWMDC-DC converters, power management in portable and battery-powered
products such as computers, printers, battery charger, telecommunication
power system, and telephones power system.
TO-252(D-Pack)
FEATURES




Low RDS(on) provides higher efficiency and extends battery life.
Miniature TO-252 surface mount package saves board space.
High power and current handling capability.
Extended VGS range (±25) for battery pack applications.
A
B
C
D
GE
PRODUCT SUMMARY
VDS(V)
-40
PRODUCT SUMMARY
RDS(on) m(
[email protected]= -10V
[email protected]= -4.5V
K
ID(A)
-36
-29

M
REF.
Gate
A
B
C
D
E
F
G
H

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Pulsed Drain Current
a
b
Continuous Source Current (Diode Conduction)
Total Power Dissipation
N
O
P
J
Drain

Continuous Drain Current
HF
a
a
Operating Junction and Storage Temperature Range
Millimeter
Min.
Max.
6.4
6.8
5.20
5.50
2.20
2.40
0.45
0.58
6.8
7.3
2.40
3.0
5.40
6.2
0.8
1.20
REF.
J
K
M
N
O
P
Millimeter
Min.
Max.
2.30 REF.
0.70
0.90
0.50
1.1
0.9
1.6
0
0.15
0.43
0.58
UNIT
VDS
-40
V
VGS
±20
V
ID @TA=25℃
36
A
IDM
±40
A
IS
-30
A
PD @TA=25℃
50
W
TJ, TSTG
-55 ~ 175
°C
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient a
RθJA
50
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
3.0
°C / W
Notes:
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 5
SSD40P04-20D
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
-1
-
-
Gate-Body Leakage
IGSS
-
-
±100
Zero Gate Voltage Drain Current
IDSS
-
-
-1
-
-
-5
On-State Drain Current a
ID(on)
-41
-
-
-
-
30
-
-
40
VDS= VGS, ID = -250 μA
nA
μA
A
VDS = 0V, VGS= ±25V
VDS= -24V, VGS= 0V
VDS= -24V, VGS=0V, TJ=55°C
VDS = -5V, VGS= -10V
VGS= -10V, ID= -36A
Drain-Source On-Resistance a
RDS(ON)
Forward Transconductance a
gfs
-
31
-
S
VDS= -15V, ID= -36A
Diode Forward Voltage
VSD
-
-0.7
-
V
IS= -41 A, VGS= 0 V
mΩ
VGS= -4.5V, ID= -29A
Dynamic b
Total Gate Charge
Qg
-
13.9
-
Gate-Source Charge
Qgs
-
5.2
-
Gate-Drain Charge
Qgd
-
5.8
-
Input Capacitance
Ciss
-
1583
-
Output Capacitance
Coss
-
278
-
Reverse Transfer Capacitance
Crss
-
183
-
nC
VDS = -15 V
VGS = -4.5 V
ID = -36 A
pF
VDS = -15 V
VGS = 0 V
f = 1MHz
nS
VDD= -15 V
ID= -41 A
VGEN = -10 V
RL= 15 
RG= 6 
Switching
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
-
15
-
Tr
-
12
-
Td(off)
-
62
-
Tf
-
46
-
Notes
a. Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%.
b. Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 5
SSD40P04-20D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 3 of 5
SSD40P04-20D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 4 of 5
SSD40P04-20D
Elektronische Bauelemente
P-Ch Enhancement Mode Power MOSFET
-36A, -40V, RDS(ON) 30mΩ
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev.B
Any changes of specification will not be informed individually.
Page 5 of 5