SECOS SSE90N06

SSE90N06-10P
90A , 60V , RDS(ON) 9.9 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
TO-220P
DESCRIPTION
These miniature surface mount MOSFETs utilize a
High Cell Density trench process to provide low RDS(on)
and to ensure minimal power loss and heat dissipation.
D
C
B
E
FEATURES




Low RDS(on) Provides Higher Efficiency and
Extends Battery Life.
Low Thermal impedance copper leadframe
TO-220P saves board space.
Fast Switch speed.
High performance trench technology.
R
T
A
S
G
F
H
J
I
K
L
U
M
X
P
N
APPLICATION
O
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
Q
N-Channel
D2
G1
S3
A
B
C
D
E
F
G
H
J
K
L
M
W
Q
1 2 3
REF.
V
Millimeter
Min.
Max.
7.90
8.10
9.45
9.65
9.87
10.47
11.50
1.06
1.46
2.60
3.00
6.30
6.70
8.35
8.75
1.60 Typ.
1.10
1.30
1.17
1.37
1.50
REF.
N
O
P
Q
R
S
T
U
V
W
X
Millimeter
Min.
Max.
0.75
0.95
0.66
0.86
13.50
14.50
2.44
3.44
3.50
3.70
1.15
1.45
4.30
4.70
2.7
1.89
3.09
0.40
0.60
2.60
3.60
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
±20
V
ID
90
A
IDM
240
A
IS
90
A
PD
120
W
Tj, Tstg
-55~175
°C
Continuous Drain Current 1
Pulsed Drain Current
TC= 25°C
2
Continuous Source Current (Diode Conduction)
a
Power Dissipation 1
TC= 25°C
Operating Junction and Storage Temperature Range
Thermal Resistance Rating
Maximum Junction to Ambient
1
Maximum Junction to Case
RJA
62.5
RJC
1.25
°C / W
Notes
1 Package Limited.
2 Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
12-Aug-2011 Rev.B
Any changes of specification will not be informed individually.
Page 1 of 4
SSE90N06-10P
90A , 60V , RDS(ON) 9.9 m
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Gate-Threshold Voltage
VGS(th)
1
-
3.5
V
VDS=VGS, ID=250uA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS=0, VGS=20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
120
-
-
-
-
9.9
-
-
13
gfs
-
30
-
S
VDS=15V, ID=20A
VSD
-
0.8
-
V
IS=20A, VGS=0
pF
VDS=15V,
VGS=0,
f=1MHz
nC
VDS=30V,
VGS=4.5V,
ID=20A
nS
VDD=30V, VGEN=10V,
RL=1.5Ω, ID=20A,
RGEN=6Ω
On-State Drain Current
1
ID(on)
Drain-Source On-Resistance 1
Forward Transconductance
1
Diode Forward Voltage
RDS(ON)
Dynamic
Ciss
-
5887
-
Output Capacitance
Coss
-
567
-
Reverse Transfer Capacitance
Crss
-
352
-
Total Gate Charge
Qg
-
77
-
Gate-Source Charge
Qgs
-
21
-
Gate-Drain Charge
Qgd
-
40
-
Turn-on Delay Time
Td(on)
-
23
-
Tr
-
80
-
Td(off)
-
226
-
Tf
-
99
-
Turn-off Delay Time
Fall Time
A
VDS=48V, VGS=0
VDS=48V, VGS=0, TJ=55°C
VDS=5V, VGS=10V
mΩ
VGS=10V, ID=30A
VGS=4.5V, ID=20A
2
Input Capacitance
Rise Time
uA
Notes:
1 Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
12-Aug-2011 Rev.B
Any changes of specification will not be informed individually.
Page 2 of 4
SSE90N06-10P
Elektronische Bauelemente
90A , 60V , RDS(ON) 9.9 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Aug-2011 Rev.B
Any changes of specification will not be informed individually.
Page 3 of 4
SSE90N06-10P
Elektronische Bauelemente
90A , 60V , RDS(ON) 9.9 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
12-Aug-2011 Rev.B
Any changes of specification will not be informed individually.
Page 4 of 4