SSG4480N 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. B L APPLICATIONS D M White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits A C N J H PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch REF. A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D Ratings Unit MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS ±20 V ID @ TA = 25°C 7.1 A ID @ TA = 70°C 6 A Continuous Drain Current 1 Pulsed Drain Current 2 IDM 50 A IS 3.8 A PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2.2 W TJ, TSTG -55 ~ 150 °C 40 °C / W 80 °C / W Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range Thermal Resistance Ratings Thermal Resistance Junction-ambient (Max.) 1 t≦10 sec Steady State RθJA Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 1 of 4 SSG4480N 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID=-250μA Gate-Body Leakage Current IGSS - - ±10 μA VDS= 0V, VGS= ±20V Zero Gate Voltage Drain Current IDSS On-State Drain Current1 ID(on) Drain-Source On-Resistance1 RDS(ON) - - 1 - - 10 μA 20 - - - - 41 - - 57 20 - S VDS=15V, ID=5.4A 0.76 - V IS=2A, VGS=0V Forward Transconductance1 gfs - Diode Forward Voltage VSD - A VDS=64V, VGS=0V VDS=64V, VGS=0V, TJ=55°C mΩ VDS=5V, VGS=10V VGS=10V, ID=5.4A VGS=4.5V, ID=4.6A Dynamic 2 Total Gate Charge Qg - 19.5 - Gate-Source Charge Qgs - 4.5 - Gate-Drain Charge Qgd - 10 - Turn-On Delay Time Td(on) - 12.8 - Tr - 24 - Td(off) - 52.3 - Rise Time Turn-Off Delay Time Fall Time Tf - 46 - Input Capacitance CISS - 1522 - Output Capacitance COSS - 129 - Reverse Transfer Capacitance CRSS - 87 - nC ID=5.4A VDS=40V VGS=4.5V nS VDD=40V ID=5.4A VGEN=10V RL=7.5Ω RGEN=6Ω pF VDS=15V VGS=0V f=1Mhz Notes 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 2 of 4 SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 3 of 4 SSG4480N Elektronische Bauelemente 7.1 A, 80 V, RDS(ON) 41 m N-Ch Enhancement Mode Power MOSFET TYPICAL ELECTRICAL CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 17-Dec-2010 Rev. C Any changes of specification will not be informed individually. Page 4 of 4