SSD40N10-30D 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free FEATURES TO-252(D-Pack) Low RDS(on) trench technology. Low thermal impedance. Fast switching speed. APPLICATION PoE Power Sourcing Equipment. PoE Powered Devices. Telecom DC/DC converters. White LED boost converters. A B C D GE K PACKAGE INFORMATION Package MPQ Leader Size TO-252 2.5K 13’ inch M REF. A B C D E F G H HF N O P J Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 2 Drain 1 Gate 3 Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID 26 A IDM 50 A IS 50 A PD 50 W TJ, TSTG -55 ~ 175 °C RθJA 50 °C / W RθJC 3.0 °C / W Continuous Drain Current @TC=25℃ Pulsed Drain Current 1 2 Continuous Source Current (Diode Conduction) Total Power Dissipation @TC=25℃ 1 1 Operating Junction and Storage Temperature Range Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 Maximum Thermal Resistance Junction-Case Notes： 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 04-May-2011 Rev.A Any changes of specification will not be informed individually. Page 1 of 4 SSD40N10-30D 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1.0 - 3.5 V VDS=VGS, ID = 250µA Gate-Body Leakage IGSS - - ±100 nA VDS=0, VGS=20V - - 1 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance Forward Transconductance 1 1 Diode Forward Voltage RDS(ON) µA - - 25 34 - - - - 36 VDS=5V, VGS=10V VGS=10V, ID=10 A - 42 gfs - 10 - S VDS=15V, ID=10 A VSD - 0.89 VGS=4.5V, ID=9.2 A - V IS=25A, VGS=0 2 Qg - 14.8 - Gate-Source Charge Qgs - 4.3 - Gate-Drain Charge Qgd - 8.6 - Turn-on Delay Time Td(on) - 4.8 - Tr - 14.2 - Td(off) - 39.2 - Tf - 25.6 - Fall Time A - Total Gate Charge Turn-off Delay Time VDS=80V, VGS=0, TJ=55°C mΩ Dynamic Rise Time VDS=80V, VGS=0 nC nS Input Capacitance Ciss 1216 Output Capacitance Coss 154 Reverse Transfer Capacitance Crss - 131 pF - VDS=50V VGS=4.5V ID=10 A VDD= 50V RL=5Ω ID=10 A VGEN=10V RGEN=6Ω VDS=15V VGS=0 f=1MHz Notes: 1. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 04-May-2011 Rev.A Any changes of specification will not be informed individually. Page 2 of 4 SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-May-2011 Rev.A Any changes of specification will not be informed individually. Page 3 of 4 SSD40N10-30D Elektronische Bauelemente 26A, 100V, RDS(ON) 36mΩ N-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 04-May-2011 Rev.A Any changes of specification will not be informed individually. Page 4 of 4