SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. SOP-8 B L A C N FEATURES D M J Low RDS(on) provides higher efficiency and extends battery life. Miniature SOP-8 surface mount package saves board space. High power and current handling capability. Extended VGS range (±25) for battery pack applications. H G REF. A B C D E F G PACKAGE INFORMATION Package MPQ LeaderSize SOP-8 2.5K 13’ inch Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±25 V ID @ TA = 25°C -9.5 A ID @ TA = 70°C -8.3 A Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range IDM ±50 A IS -2.1 A PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2.6 W TJ, TSTG -55 ~ 150 °C Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 t ≦ 5 sec RθJC 25 °C / W Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec RθJA 50 °C / W Notes 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4835P -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static VGS(th) -1 - - V VDS= VGS, ID= -250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - -1 μA VDS= -24V, VGS= 0V - - -5 μA VDS= -24V, VGS= 0V, TJ=55°C On-State Drain Current 1 ID(on) -50 - - A VDS= -5V, VGS= -10V - - 19 - - 30 - - 29 gfs - 31 - S VDS= -15V, ID= -9.5A VSD - -0.7 - V IS= -2.1A, VGS= 0V Gate Threshold Voltage Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) VGS= -10V, ID= -9.5A mΩ VGS= -4.5V, ID= -7.5A VGS= -10V, ID= -9.5A, TJ=55°C Dynamic 2 Total Gate Charge Qg - 15.3 - Gate-Source Charge Qgs - 5.2 - Gate-Drain Charge Qgd - 5.8 - nC ID= -9.5A VDS= -15V VGS= -4.5V nS VDD= -15V, ID= -1A VGEN= -10V, RL= 15Ω RG= 6Ω Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Td(on) - 15 - Tr - 12 - Td(off) - 62 - Tf - 46 - Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4835P Elektronische Bauelemente -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4835P Elektronische Bauelemente -9.5 A, -30 V, RDS(ON) 19 m P-Ch Enhancement Mode Power MOSFET CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 31-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4