SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWM DC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. A B C D FEATURES Low RDS(on) Provides Higher Efficiency and Extends Battery Life Miniature TO-252 Surface Mount Package Saves Board Space High power and current handling capability Low side high current DC-DC Converter applications GE K HF N O P PRODUCT SUMMARY VDS(V) 60 PRODUCT SUMMARY RDS(on) m( 13 @VGS= 10V 18 @VGS= 4.5V M ID(A) J REF. 51 44 A B C D E F G H Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 REF. J K M N O P Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT VDS 60 V VGS ±20 V ID @TC=25℃ 51 A IDM 40 A IS 30 A PD @TC=25℃ 50 W TJ, TSTG -55 ~ 175 °C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current a b Continuous Source Current (Diode Conduction) Power Dissipation a a Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient a RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 27-Sep-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSD50N06-15D N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) 1.0 - - IGSS - - ±100 - - 1 - - 25 34 - - - - 13 - - 18 Zero Gate Voltage Drain Current IDSS On-State Drain Current a ID(ON) Drain-Source On-Resistance a RDS(ON) V VDS = VGS, ID = 250μA nA VDS= 0V, VGS= 20V VDS= 48V, VGS= 0V μA A mΩ VDS= 48V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 51A VGS= 4.5V, ID= 44A Forward Transconductance a gfs - 22 - S VDS= 15V, ID= 51A Diode Forward Voltage VSD - 1.1 - V IS= 24A, VGS = 0V Dynamic b Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.4 - Gate-Drain Change Qgd - 2.6 - Input Capacitance Ciss - 2730 - Output Capacitance Coss - 440 - Reverse Transfer Capacitance Crss - 180 - Turn-on Delay Time Td(on) - 11 - Tr - 8 - Td(off) - 19 - Tf - 6 - Rise Time Turn-off Delay Time Fall Time ID= 51 A nC VDS= 15 V VGS= 4.5 V f = 1MHz pF VDS= 15 V VGS= 0 V VDD= 25 V nS ID= 30 A RL= 25 VGEN= 10 V Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 27-Sep-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 27-Sep-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSD50N06-15D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 51A, 60V, RDS(ON) 13 mΩ CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 27-Sep-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4