SSG4436N 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. B L FEATURES D M Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. A C N J H G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. REF. A B C D E F G APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. PACKAGE INFORMATION K F REF. H J K L M N E Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D Package MPQ LeaderSize S D SOP-8 2.5K 13’ inch S D G D ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 V 22 A 18 A IDM 60 A IS 2.9 A 3.1 W 2.2 W -55 ~ 150 °C Continuous Drain Current Pulsed Drain Current 1 TA = 25°C TA = 70°C 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 TA = 25°C TA = 70°C Operating Junction & Storage Temperature Range ID PD TJ, TSTG Thermal Resistance Ratings Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 10 sec Steady State RθJA 40 °C / W 80 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. D Any changes of specification will not be informed individually. Page 1 of 4 SSG4436N 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - 3 V VDS= VGS, ID= 250μA Gate-Body Leakage IGSS - - 100 nA VDS= 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS - - 1 μA VDS= 24V, VGS= 0V - - 5 μA VDS= 24V, VGS= 0V, TJ= 55°C 30 - - A VDS= 5V, VGS= 10V - - 4.6 - - 6.8 gfs - 90 - S VDS= 15V, ID= 18.6A VSD - 0.7 - V IS= 2.3A, VGS= 0V On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance Diode Forward Voltage 1 RDS(ON) Dynamic Qg - 25 - Gate-Source Charge Qgs - 6 - Gate-Drain Charge Qgd - 9 - Turn-On Delay Time Td(on) - 20 - Tr - 13 - Td(off) - 82 - Tf - 43 - Turn-Off Delay Time Fall Time VGS= 10V, ID= 12A VGS= 4.5V, ID= 10A 2 Total Gate Charge Rise Time mΩ nC ID= 18.6A VDS= 15V VGS= 4.5V nS VDD= 15V ID= 1A VGEN= 10V RL= 6Ω Notes: 1. Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. D Any changes of specification will not be informed individually. Page 2 of 4 SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. D Any changes of specification will not be informed individually. Page 3 of 4 SSG4436N Elektronische Bauelemente 22A, 30V, RDS(ON) 4.6m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 01-Mar-2011 Rev. D Any changes of specification will not be informed individually. Page 4 of 4