SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente DESCRIPTION SOP-8 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. B L D M A C N J FEATURES H Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. REF. A B C D E F G K G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. PACKAGE INFORMATION Package MPQ LeaderSize S D SOP-8 2.5K 13’ inch S D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS V IDM ±20 ±13 ±11 ±50 IS 2.3 A PD @ TA = 25°C 3.1 W PD @ TA = 70°C 2.2 W TJ, TSTG -55 ~ 150 °C ID @ TA = 25°C Continuous Drain Current 1 Pulsed Drain Current ID @ TA = 70°C 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Operating Junction & Storage Temperature Range A A A Thermal Resistance Ratings Thermal Resistance Junction-Case (Max.) 1 Thermal Resistance Junction-Ambient (Max.) 1 t ≦ 5 sec RθJC 25 °C / W t ≦ 5 sec RθJA 50 °C / W Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 4 SSG4410N 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Gate-Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID= 250μA Gate-Body Leakage IGSS - - ±100 nA VDS= 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 Forward Transconductance 1 Diode Forward Voltage RDS(ON) - - 1 μA VDS= 24V, VGS= 0V - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C A 20 - - - - 13.5 - - 20 mΩ VDS= 5V, VGS= 10V VGS= 10V, ID= 10A VGS= 4.5V, ID= 8A gfs - 40 - S VDS= 15V, ID= 10A VSD - 0.7 - V IS= 2.3A, VGS= 0V Dynamic 2 Total Gate Charge Qg - 12.5 - Gate-Source Charge Qgs - 2.6 - Gate-Drain Charge Qgd - 4.6 - Input Capacitance CISS 1191 Output Capacitance COSS 412 Reverse Transfer Capacitance CRSS Turn-On Delay Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Rise Time Turn-Off Delay Time Fall Time nC ID= 10A VDS= 15V VGS= 4.5V pF f = 1 MHz VDS= 15V VGS= 0V nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω 160 Notes 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 4 SSG4410N Elektronische Bauelemente 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 4 SSG4410N Elektronische Bauelemente 13 A, 30 V, RDS(ON) 13.5 m N-Ch Enhancement Mode Power MOSFET CHARACTERISTICS CURVE http://www.SeCoSGmbH.com/ 10-Dec-2010 Rev. B Any changes of specification will not be informed individually. Page 4 of 4