SECOS SSRF30N20-400

SSRF30N20-400
23A, 200V, RDS(ON) 400mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench
process to provide Low RDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC converters and power management
in portable and battery-powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
ITO-220
B
M
A
H
J
C
L
K
L
FEATURES




Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe ITO-220 saves board
space.
Fast switching speed.
High performance trench technology.
PRODUCT SUMMARY
VDS(V)
200
N
D
E
G
F
Dimensions in millimeters
SSRF30N20-400
RDS(on) (m
[email protected]= 10V
[email protected]= 4.5V
ID(A)
REF.
23
1
A
B
C
D
E
F
G
Millimeter
Min.
Max.
15.00
15.60
9.50
10.50
13.00 Min
4.30
4.70
2.50
3.10
2.40
2.80
0.30
0.70
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
3.00
3.80
0.90
1.50
0.50
0.90
2.34
2.74
2.50
2.90
 3.1
3.4

Drain

Gate

Source
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
2
Continuous Source Current (Diode Conduction)
Total Power Dissipation
1
1
Operating Junction and Storage Temperature Range
UNIT
VDS
200
V
VGS
±20
V
ID @TC=25℃
23
A
IDM
240
A
IS
90
A
PD @TC=25℃
300
W
TJ, TSTG
-55 ~ 175
°C
THERMAL RESISTANCE RATINGS
Maximum Thermal Resistance Junction-Ambient 1
RθJA
62.5
°C / W
Maximum Thermal Resistance Junction-Case
RθJC
0.5
°C / W
Notes:
1
Package Limited.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.A
Any changes of specification will not be informed individually.
Page 1 of 2
SSRF30N20-400
23A, 200V, RDS(ON) 400mΩ
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBO MIN. TYP. MAX. UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
1
-
-
V
VDS= VGS, ID = 250 μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= 20V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
On-State Drain Current 1
ID(on)
120
-
-
-
-
400
-
-
450
μA
A
VDS= 160V, VGS= 0V
VDS= 160V,VGS= 0V,TJ=55°C
VDS = 5V, VGS= 10V
VGS= 10V, ID= 30 A
Drain-Source On-Resistance 1
RDS(ON)
Forward Transconductance 1
gfs
-
30
-
S
VDS= 15V, ID= 30 A
Diode Forward Voltage
VSD
-
1.1
-
V
IS= 34 A, VGS= 0 V
mΩ
VGS= 4.5V, ID= 20 A
Dynamic 2
Total Gate Charge
Qg
-
8.5
-
Gate-Source Charge
Qgs
-
3.3
-
Gate-Drain Charge
Qgd
-
4.0
-
Turn-on Delay Time
Td(on)
-
18
-
Tr
-
59
-
Td(off)
-
37
-
Tf
-
9
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS = 15 V
VGS = 4.5 V
ID = 90 A
nS
VDD= 25 V
ID= 34 A
VGEN = 10 V
RL= 25 
Notes
1
Pulse test:Pulse width ≦ 300 μs, duty cycle ≦ 2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
01-Dec-2010 Rev.A
Any changes of specification will not be informed individually.
Page 2 of 2