SSRF30N20-400 23A, 200V, RDS(ON) 400mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. ITO-220 B M A H J C L K L FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe ITO-220 saves board space. Fast switching speed. High performance trench technology. PRODUCT SUMMARY VDS(V) 200 N D E G F Dimensions in millimeters SSRF30N20-400 RDS(on) (m 400@VGS= 10V 450@VGS= 4.5V ID(A) REF. 23 1 A B C D E F G Millimeter Min. Max. 15.00 15.60 9.50 10.50 13.00 Min 4.30 4.70 2.50 3.10 2.40 2.80 0.30 0.70 REF. H J K L M N Millimeter Min. Max. 3.00 3.80 0.90 1.50 0.50 0.90 2.34 2.74 2.50 2.90 3.1 3.4 Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 2 Continuous Source Current (Diode Conduction) Total Power Dissipation 1 1 Operating Junction and Storage Temperature Range UNIT VDS 200 V VGS ±20 V ID @TC=25℃ 23 A IDM 240 A IS 90 A PD @TC=25℃ 300 W TJ, TSTG -55 ~ 175 °C THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambient 1 RθJA 62.5 °C / W Maximum Thermal Resistance Junction-Case RθJC 0.5 °C / W Notes： 1 Package Limited. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 01-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 1 of 2 SSRF30N20-400 23A, 200V, RDS(ON) 400mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBO MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) 1 - - V VDS= VGS, ID = 250 μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= 20V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 On-State Drain Current 1 ID(on) 120 - - - - 400 - - 450 μA A VDS= 160V, VGS= 0V VDS= 160V,VGS= 0V,TJ=55°C VDS = 5V, VGS= 10V VGS= 10V, ID= 30 A Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 gfs - 30 - S VDS= 15V, ID= 30 A Diode Forward Voltage VSD - 1.1 - V IS= 34 A, VGS= 0 V mΩ VGS= 4.5V, ID= 20 A Dynamic 2 Total Gate Charge Qg - 8.5 - Gate-Source Charge Qgs - 3.3 - Gate-Drain Charge Qgd - 4.0 - Turn-on Delay Time Td(on) - 18 - Tr - 59 - Td(off) - 37 - Tf - 9 - Rise Time Turn-off Delay Time Fall Time nC VDS = 15 V VGS = 4.5 V ID = 90 A nS VDD= 25 V ID= 34 A VGEN = 10 V RL= 25 Notes 1 Pulse test：Pulse width ≦ 300 μs, duty cycle ≦ 2％. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 01-Dec-2010 Rev.A Any changes of specification will not be informed individually. Page 2 of 2