SSD30N10-50D 26A, 100V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. FEATURES Low RDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe TO-252 saves board space Fast switching speed High performance trench technology A B C D GE APPLICATION K DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. M Package MPQ LeaderSize TO-252 2.5K 13’ inch N O P J REF. A B C D E F G H PACKAGE INFORMATION HF Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 REF. J K M N O P Drain Gate Source ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 TC=25℃ 2 Continuous Source Current (Diode Conduction) Power Dissipation 1 1 TC=25℃ Operating Junction and Storage Temperature Range Symbol Ratings Unit VDS 100 V VGS ±20 V ID 20 A IDM 36 A IS 30 A PD 50 W TJ, TSTG -55 ~ 175 °C Thermal Resistance Ratings Maximum Thermal Resistance Junction-Ambient 1 RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes: 1. Surface Mounted on 1” x 1” FR4 Board. 2. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSD30N10-50D 26A, 100V, RDS(ON) 50mΩ N-Ch Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) 1.0 - - V VDS=VGS, ID=250μA IGSS - - ±100 nA VDS=0, VGS=20V - - 1 - - 25 34 - - - - 50 - - 59 4.4 - S VDS=40V, ID=5.5A 1.1 - V IS=9A, VGS=0 Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(ON) Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 gfs - Diode Forward Voltage VSD Dynamic Qg - 25 - Gate-Source Charge Qgs - 5 - Gate-Drain Change Qgd - 19 - Turn-on Delay Time Td(on) - 9 - Tr - 15 - Td(off) - 45 - Tf - 39 - Turn-off Delay Time Fall Time μA A mΩ VDS=80V, VGS=0, TJ=55°C VDS=5V, VGS=10V VGS=10V, ID=9.2A VGS=4.5V, ID=6.1A 2 Total Gate Charge Rise Time VDS=80V, VGS=0 nC ID= 9 A VDS= 25 V VGS= 10 V nS VDD=100V ID= 9A RL= 25 VGEN= 10V Notes: 1. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. 2. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 04-Mar-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2