SSG4940N 8.3 A, 40 V, RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. SOP-8 B L D M FEATURES A Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SOP-8 saves board space. Fast switching speed. High performance trench technology. N J H PACKAGE INFORMATION REF. Package MPQ LeaderSize SOP-8 2.5K 13’ inch C A B C D E F G G Millimeter Min. Max. 5.80 6.20 4.80 5.00 3.80 4.00 0° 8° 0.40 0.90 0.19 0.25 1.27 TYP. K E F REF. H J K L M N Millimeter Min. Max. 0.35 0.49 0.375 REF. 45° 1.35 1.75 0.10 0.25 0.25 REF. S D G D S D G D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Ratings Unit VDS 40 V VGS ±20 V ID @ TA = 25°C 8.3 A ID @ TA = 70°C 6.8 A IDM 50 A IS 2.3 A PD @ TA = 25°C 2.1 W Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Total Power Dissipation 1 Symbol PD @ TA = 70°C 1.3 W TJ, TSTG -55 ~ 150 °C 62.5 °C / W 110 °C / W Operating Junction & Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Junction to Ambient a t ≦ 10 sec Steady-State RθJA Notes 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 SSG4940N 8.3 A, 40 V, RDS(ON) 22 m Dual-N Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test conditions Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS 30 - - V VGS= 0V, ID= 250μA VGS(th) 1 - - V VDS= VGS, ID= 250μA - - ±100 nA VDS= 0V, VGS= 20V - - 1 μA VDS= 24V, VGS= 0V IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current 1 ID(on) Drain-Source On-Resistance 1 RDS(ON) Forward Transconductance 1 Diode Forward Voltage Pulsed Source Current(BodyDiode) 1 - - 25 μA VDS= 24V, VGS= 0V, TJ= 55°C 20 - - A VDS= 5V, VGS= 10V - - 22 mΩ VGS= 10V, ID= 8.3A - - 27 gfs - 40 - S VGS= 4.5V, ID= 7.3A VDS= 15V, ID= 8.3A VSD - 0.7 - V IS= 2.3A, VGS= 0V ISM - 5 - A Dynamic 2 Total Gate Charge Qg - 20 - Gate-Source Charge Qgs - 7.0 - Gate-Drain Charge Qgd - 7.0 - Input Capacitance Ciss - 1317 - Output Capacitance Coss - 272 - Turn-On Delay Time Td(on) - 20 - Tr - 9 - Td(off) - 70 - Tf - 20 - Rise Time Turn-Off Delay Time Fall Time nC ID= 10A VDS= 15V VGS= 5V pF N-Channel VDS=15V,VGS=0V, f=1MHz nS VDD= 25V ID= 1A VGEN= 10V RL= 25Ω Notes 1 Pulse test：PW ≦ 300μs duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 10-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2