SECOS STT3490N

STT3490N
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, RDS(ON) 700 m
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
KEY FEATURES



TSOP-6
Low RDS(on) trench technology.
Low thermal impedance.
Fast switching speed.
A
E
5
6
L
4
TYPICAL APPLICATIONS



B
White LED boost converters.
Automotive Systems
Industrial DC/DC Conversion Circuits
F
1
2
3
C
H
J
K
DG
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
RDS(on) (m
700@VGS= 10V
1200@VGS= 4.5V
150
ID(A)
1.2
1
REF.
D
D
D
D
G
S
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.
ABSOLUTE MAXIMUM RATINGS(TA=25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
VDS
VGS
Drain-Source Voltage
Gate-Source Voltage
TA= 25°C
TA= 70°C
Continuous Drain Current a
b
Power Dissipation
TA= 25°C
TA= 70°C
a
Operating Junction and Storage Temperature Range
Unit
150
±20
1.2
1
±10
2.5
2
1.3
-55 ~ 150
°C
Symbol
Maximum
Unit
RJA
62.5
110
°C / W
ID
IDM
IS
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Ratings
Maximum
PD
Tj, Tstg
V
V
A
A
A
W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient a
t ≦ 10 sec
Steady State
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 4
STT3490N
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, RDS(ON) 700 m
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Symbol Min.
Typ. Max.
Unit
Test Conditions
VGS(th)
1
-
3.5
V
VDS=VGS, ID= 250uA
Gate-Body Leakage
IGSS
-
-
±100
uA
VDS= 0V, VGS= ±20V
-
-
1
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current a
Drain-Source On-Resistance a
ID(on)
RDS(ON)
uA
-
-
10
10
-
-
-
-
700
VDS= 120V, VGS= 0V, TJ= 55°C
A
VDS = 5V, VGS= 10V
mΩ
-
-
1200
VDS= 120V, VGS= 0V
VGS= 10V, ID= 1.2A
VGS= 4.5V, ID= 1A
Forward Transconductance a
gfs
-
11
-
S
VDS= 15V, ID= 1.2A
Diode Forward Voltage a
VSD
-
0.8
-
V
IS= 1.25A, VGS= 0V
DYNAMIC b
Total Gate Charge
Qg
-
2.5
-
Gate-Source Charge
Qgs
-
1
-
Gate-Drain Charge
Qgd
-
0.8
-
Turn-on Delay Time
Td(on)
-
5
-
Tr
-
5
-
Td(off)
-
6
-
Tf
-
4
-
Input Capacitance
Ciss
-
320
-
Output Capacitance
Coss
-
37
-
Reverse Transfer Capacitance
Crss
-
20
-
Rise Time
Turn-off Delay Time
Fall Time
nC
VDS= 10V, VGS= 4.5V,
ID= 1A
nS
VDD= 10V, VGEN= 10V,
RL= 10, ID= 1A, RGEN= 6
pF
VDS= 15V, VGS= 0V,
f= 1MHz
Notes
a.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 4
STT3490N
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, RDS(ON) 700 m
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 4
STT3490N
Elektronische Bauelemente
N-Channel Enhancement Mode Mos.FET
1.2 A, 150 V, RDS(ON) 700 m
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
25-Aug-2010 Rev. B
Any changes of specification will not be informed individually.
Page 4 of 4