STT3599C

STT3599C
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
TSOP-6
These miniature surface mount MOSFETs utilize a high cell density
trench process to provide low RDS(on) and to ensure minimal power
loss and heat dissipation. Typical applications are DC-DC converters
and power management in portable and battery-powered products
such as computers, printers, PCMCIA cards, cellular and cordless
telephones.
A
E
B
F
FEATURES




Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe TSOP-6 saves board space.
Fast switching speed.
High performance trench technology.
C
RDS(on) (
0.063@VGS= 10V
0.090@VGS= 4.5V
0.112@VGS= -10V
0.172@VGS= -4.5V
REF.
A
B
C
D
E
F
30
-30
D1 S1
6
5
ID(A)
3.7
3.1
-2.7
-2.2
H
J
K
DG
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
L
Millimeter
Min.
Max.
2.70
3.10
2.60
3.00
1.40
1.80
1.10 MAX.
1.90 REF.
0.30
0.50

REF.
G
H
J
K
L
Millimeter
Min.
Max.
0
0.10
0.60 REF.
0.12 REF.
0°
10°
0.95 REF.

Drain
Drain
D2

4

Gate
Gate

2
1
G1 S2
3


Source
G2
Source
ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
Power Dissipation a
Operating Junction and Storage Temperature Range
Parameter
Maximum Junction to Ambient a
Symbol
Ratings
N-Channel
P-Channel
30
±20
3.7
2.9
8
1.05
-30
±20
-2.7
-2.1
-8
-1.05
VDS
VGS
ID @TA=25℃
ID @TA=70℃
IDM
IS
PD @TA=25℃
PD @TA=70℃
Tj, Tstg
THERMAL RESISTANCE RATINGS
N-Channel
Symbol
Typ
Max
93
110
t ≦ 10 sec
RJA
Steady State
130
150
1.15
0.7
-55 ~ +150
P-Channel
Typ
Max
93
110
130
150
Unit
V
V
A
A
A
W
℃
Unit
℃/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 7
STT3599C
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage Current
Symbol Min.
N-Ch
P-Ch
N-Ch
P-Ch
VGS(th)
IGSS
N-Ch
Zero Gate Voltage Drain
P-Ch
Current
N-Ch
IDSS
P-Ch
On-State Drain Current a
N-Ch
P-Ch
ID(on)
N-Ch
P-Ch
Drain-Source
On-Resistance
a
N-Ch
RDS(ON)
P-Ch
Forward Transconductance a
Diode Forward Voltage a
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
N-Ch
P-Ch
N-Ch
P-Ch
gfs
VSD
Typ. Max.
1
1.6
2.5
-1
-1.6
-2.5
-
4.5nA
100
-
-4.5nA
-100
-
12nA
1
-
-12nA
-1
-
-
10
-
-
-10
5
-
-
-5
-
-
-
0.057
0.063
-
0.100
0.112
-
0.075
0.090
-
0.148
0.172
-
10
-
-
5
-
-
0.80
-
-
-0.83
-
Unit
Test Conditions
VDS=VGS, ID=250uA
V
VDS=VGS, ID= -250uA
uA
VDS= 0 V, VGS= 20 V
VDS= 0 V, VGS= -20 V
VDS=24 V, VGS=0 V
uA
VDS=-24V, VGS=0 V
VDS=24V, VGS=0 V, TJ=55℃
VDS= -24V, VGS=0 V, TJ=55℃
A
VDS = 5V, VGS=10 V
VDS = -5V, VGS= -10 V
VGS=10V, ID= 3.7A
Ω
VGS=-10V, ID= -2.7A
VGS=4.5V, ID= 3.1A
VGS=-4.5V, ID= -2.2A
S
S
VDS= 5V, ID= 3.7A
VDS= -5V, ID= 3.1A
IS= 1.05A, VGS= 0V
IS= -1.05A, VGS= 0V
Any changes of specification will not be informed individually.
Page 2 of 7
STT3599C
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Elektronische Bauelemente
DYNAMIC b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Reverse Transfer
N-Ch
Capacitance
P-Ch
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Qg
Qgs
Qgd
Ciss
Coss
Crss
Td(on)
Tr
Td(off)
Tf
-
2.2
5
-
3.8
8
-
0.5
1
-
0.6
2
-
0.8
2
-
1.5
3
-
184
400
-
378
800
-
62
200
-
126
300
-
30
200
-
52
300
-
5
10
-
5
10
-
12
30
-
15
30
-
13
30
-
20
40
-
7
20
-
20
40
N-Channel
VDS=15V, VGS= 4.5V,
ID= 2.7A
nC
P-Channel
VDS= -15V, VGS= -4.5V,
ID= -3.1A
N-Channel
VDS= 15V, VGS= 0V,
f= 1MHz
pF
P-Channel
VDS= -15V, VGS= 0V,
f= 1MHz
N-Channel
VDD= 15V, RGEN= 15　,
VGS= 4.5V, ID= 1A
nS
P-Channel
VDD= -15V, RGEN= 15　VGS= -4.5V, ID= -1A
Notes
a.
Pulse test：PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 7
STT3599C
Elektronische Bauelemente
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 7
STT3599C
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Any changes of specification will not be informed individually.
Page 5 of 7
STT3599C
Elektronische Bauelemente
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 6 of 7
STT3599C
Elektronische Bauelemente
http://www.SeCoSGmbH.com/
19-Jul-2010 Rev. A
(N-Ch) 3.7 A, 30 V, RDS(ON) 63 m
(P-Ch) -2.7 A, -30 V, RDS(ON) 112 m
N & P-Channel Enhancement Mode Mos.FET
Any changes of specification will not be informed individually.
Page 7 of 7