SECOS SMG2334NE

SMG2334NE
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SC-59
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process
to provide low RDS(on) and to ensure minimal power loss and heat dissipation.
Typical applications are DC-DC converters and power management in
portable and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
A
L
3
3
C B
Top View
1
FEATURES
1
K
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board
space.
Fast switching speed.
High performance trench technology.




2
E
D
F
G
REF.
PRODUCT SUMMARY
PRODUCT SUMMARY
VDS(V)
30
RDS(on) (
[email protected]= 4.5V
[email protected]= 2.5V

Drain
ID(A)
3.5
3.0
2
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15

Gate
ESD
Protection
Diode
2KV

Source
ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
RATING
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current A
VDS
VGS
TA=25°C
TA=70°C
Pulsed Drain Current B
Continuous Source Current (Diode Conduction) A
ID
IDM
IS
TA=25°C
PD
TA=70°C
Operating Junction and Storage Temperature Range
TJ, TSTG
THERMAL RESISTANCE DATA
t≦10 sec
A
Maximum Junction to Ambient
RθJA
Steady-State
Power Dissipation A
30
±12
3.5
2.8
16
1.25
1.3
0.8
-55 ~ 150
100
166
V
V
A
A
A
W
°C
°C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 4
SMG2334NE
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
PARAMETER
SYMBOL MIN TYP MAX UNIT
TEST CONDITIONS
Static
Gate-Threshold Voltage
VGS(th)
0.6
-
-
V
VDS = VGS, ID = 250μA
Gate-Body Leakage
IGSS
-
-
±100
nA
VDS = 0V, VGS= 4V
Zero Gate Voltage Drain Current
IDSS
-
-
1
-
-
25
On-State Drain Current A
ID(ON)
6
-
-
-
-
60
-
-
82
Drain-Source On-Resistance A
RDS(ON)
μA
A
mΩ
VDS = 24V, VGS= 0V
VDS = 24V, VGS= 0V, TJ=55°C
VDS = 5V, VGS= 4.5V
VGS= 4.5V, ID = 3.5A
VGS= 2.5V, ID = 3A
Forward Transconductance A
gFS
-
6.9
-
S
VDS= 15V,,ID = 3.5A
Diode Forward Voltage
VSD
-
0.8
-
V
IS= 2.3A, VGS= 0V
Dynamic b
Total Gate Charge
Qg
-
6.3
-
Gate-Source Charge
Qgs
-
0.9
-
Gate-Drain Charge
Qgd
-
1.9
-
Turn-On Delay Time
Td(ON)
-
16
-
Tr
-
5
-
Td(OFF)
-
23
-
Tf
-
3
-
Rise Time
Turn-Off Delay Time
Fall Time
ID= 3.5A
nC
VDS= 15V
VGS= 2.5V
ID= 1A, VDD= 25V
nS
VGEN= 10V
RL= 25Ω
Notes
a.
Pulse test:PW ≦ 300 us duty cycle ≦ 2%.
b.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
SMG2334NE
Elektronische Bauelemente
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 4
SMG2334NE
Elektronische Bauelemente
3.5 A, 30 V, RDS(ON) 60 m
N-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
14-Jul-2010 Rev. A
Any changes of specification will not be informed individually.
Page 4 of 4