SMG2334NE 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. A L 3 3 C B Top View 1 FEATURES 1 K Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper leadframe SC-59 saves board space. Fast switching speed. High performance trench technology. 2 E D F G REF. PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) 30 RDS(on) ( 60@VGS= 4.5V 82@VGS= 2.5V Drain ID(A) 3.5 3.0 2 A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 Gate ESD Protection Diode 2KV Source ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A VDS VGS TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A ID IDM IS TA=25°C PD TA=70°C Operating Junction and Storage Temperature Range TJ, TSTG THERMAL RESISTANCE DATA t≦10 sec A Maximum Junction to Ambient RθJA Steady-State Power Dissipation A 30 ±12 3.5 2.8 16 1.25 1.3 0.8 -55 ~ 150 100 166 V V A A A W °C °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SMG2334NE 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Static Gate-Threshold Voltage VGS(th) 0.6 - - V VDS = VGS, ID = 250μA Gate-Body Leakage IGSS - - ±100 nA VDS = 0V, VGS= 4V Zero Gate Voltage Drain Current IDSS - - 1 - - 25 On-State Drain Current A ID(ON) 6 - - - - 60 - - 82 Drain-Source On-Resistance A RDS(ON) μA A mΩ VDS = 24V, VGS= 0V VDS = 24V, VGS= 0V, TJ=55°C VDS = 5V, VGS= 4.5V VGS= 4.5V, ID = 3.5A VGS= 2.5V, ID = 3A Forward Transconductance A gFS - 6.9 - S VDS= 15V,,ID = 3.5A Diode Forward Voltage VSD - 0.8 - V IS= 2.3A, VGS= 0V Dynamic b Total Gate Charge Qg - 6.3 - Gate-Source Charge Qgs - 0.9 - Gate-Drain Charge Qgd - 1.9 - Turn-On Delay Time Td(ON) - 16 - Tr - 5 - Td(OFF) - 23 - Tf - 3 - Rise Time Turn-Off Delay Time Fall Time ID= 3.5A nC VDS= 15V VGS= 2.5V ID= 1A, VDD= 25V nS VGEN= 10V RL= 25Ω Notes a. Pulse test：PW ≦ 300 us duty cycle ≦ 2%. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SMG2334NE Elektronische Bauelemente 3.5 A, 30 V, RDS(ON) 60 m N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Jul-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4