SSD30N10-70D N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free TO-252(D-Pack) KEY FEATURES Low RDS(on) trench technology Low thermal impedance Fast switching speed Typical Applications PoE Power Sourcing Equipment PoE Powered Devices Telecom DC/DC converters While LED boost converters A B C D PRODUCT SUMMARY GE PRODUCT SUMMARY VDS(V) 100 RDS(on) m( ID(A) 78 @VGS= 10V 21 19 92 @VGS= 4.5V K M HF N O P J Drain REF. A B C D E F G H Gate Source Millimeter Min. Max. 6.4 6.8 5.20 5.50 2.20 2.40 0.45 0.58 6.8 7.3 2.40 3.0 5.40 6.2 0.8 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.70 0.90 0.50 1.1 0.9 1.6 0 0.15 0.43 0.58 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V ID @TC=25℃ 21 A IDM 100 A IS 30 A PD @TC=25℃ 50 W TJ, TSTG -55 ~ 175 °C Continuous Drain Current Pulsed Drain Current b Continuous Source Current (Diode Conduction) Power Dissipation Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Maximum Thermal Resistance Junction-Ambienta RθJA 50 °C / W Maximum Thermal Resistance Junction-Case RθJC 3.0 °C / W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. http://www.SeCoSGmbH.com/ 11-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 SSD30N10-70D N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Static Gate-Source Threshold Voltage Gate-Body Leakage VGS(th) 1.0 - - IGSS - - ±10 - - 1 - - 25 34 - - - - 78 - - 92 Zero Gate Voltage Drain Current IDSS On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) V VDS = VGS, ID = 250μA μA VDS= 0V, VGS= 20V VDS= 80V, VGS= 0V μA A mΩ VDS= 80V, VGS= 0V, TJ= 55°C VDS= 5V, VGS= 10V VGS= 10V, ID= 9.2A VGS= 4.5V, ID= 6.1A Forward Transconductance gfs - 20 - S VDS= 40V, ID= 5.5A Diode Forward Voltage VSD - 0.8 - V IS= 9A, VGS = 0V Dynamic Total Gate Charge Qg - 21 - Gate-Source Charge Qgs - 3.8 - Gate-Drain Change Qgd - 14.2 - Turn-on Delay Time2 Td(on) - 7.5 - Tr - 13.6 - Td(off) - 41 - Tf - 35 - Rise Time Turn-off Delay Time Fall Time ID= 9 A nC VDS= 50 V VGS= 4.5 V VDD= 50 V ID= 9.6 A nS RL= 5.2 VGEN= 10 V RGEN= 6 Notes a. Pulse test： PW ≦ 300 us duty cycle ≦ 2％. b. Guaranteed by design, not subject to production testing. http://www.SeCoSGmbH.com/ 11-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 4 SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ 11-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 3 of 4 SSD30N10-70D Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 21A, 100V, RDS(ON) 78 mΩ CHARACTERISTICS CURVES http://www.SeCoSGmbH.com/ 11-Aug-2010 Rev. A Any changes of specification will not be informed individually. Page 4 of 4