SEME 2N3700DCSM LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 6.22 ± 0.13 (0.245 ± 0.005) A= 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 • HIGH VOLTAGE APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3700 for high reliability/ space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25°C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2N3700 140V 80V 7V 1A 350mW 525mW 2mW / °C 3mW/°C 240°C/W –65 to 200°C Prelim. 2/98 SEME 2N3700DCSM LAB ELECTRICAL CHARACTERISTICS (per Device) Parameter VCEO(sus)* (Tcase = 25°C unless otherwise stated) Test Conditions Collector – Emitter Sustaining Voltage Min. IC =10mA Typ. Max. Unit V 80 (IB = 0) ICBO* Collector – Base Cut-off Current VCB = 90V 10 nA (IE = 0) VCB = 90V 10 µA IEBO* Emitter Cut-off Current (IC = 0) VEB = 5V 10 nA VCE(sat)* Collector – Emitter Saturation Voltage IC = 150mA IB = 15mA 0.2 V IC = 500mA IB = 50mA 0.5 V 1.1 V Tamb = 150°C VBE(sat)* Base – Emitter Saturation Voltage IC = 150mA IB = 15mA hFE* DC Current Gain (VCE = 10V) IC = 0.1mA VCE = 10V 50 - IC = 10mA VCE = 10V 90 - IC = 150mA VCE = 10V 100 IC = 500mA VCE = 10V 50 - IC = 1A VCE = 10V 15 - IC = 150mA VCE = 10V V(BR)CBO Collector-base Breakdown Voltage 300 - - IC = 100µA 140 V IE = 100µA 7 V (IE = 0) V(BR)EBO Emitter-base BreakdownVoltage (IC = 0) * Pulse test tp = 300µs , δ ≤ 1% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency IC = 50mA VCE = 10V f = 20MHz 100 200 MHz hfe Small Signal Current Gain IC = 1mA VCE = 5V f = 1kHz 80 400 - CEBO Emitter-base Capacitance IC = 0 VEB = 0.5V f = 1MHz 60 pF CCBO Collector-base Capacitance IC = 0 VCB = 10V f = 1MHz 12 pF rbb’Cb’c Feedback time constant IC = 10mA VCB = 10V f = 4MHz 400 ps Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 25 Prelim. 2/98