2N3439DCSM 2N3440DCSM SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN DUAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 3 1 4 A 6 5 0.23 rad. (0.009) • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 4.32 ± 0.13 (0.170 ± 0.005) 2 2.54 ± 0.13 (0.10 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.08 (0.025 ± 0.003) 2.29 ± 0.20 (0.09 ± 0.008) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 6.22 ± 0.13 (0.245 ± 0.005) A= 1.27 ± 0.13 (0.05 ± 0.005) LCC2 PACKAGE Underside View PAD 1 – Collector 1 PAD 2 – Base 1 PAD 3 – Base 2 PAD 4 – Collector 2 PAD 5 – Emitter 2 PAD 6 – Emitter 1 • HIGH VOLTAGE APPLICATIONS: Dual Hermetically sealed surface mount version of the popular 2N3439 and 2N3440 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD PD Rja Tstg Semelab plc. Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Per Device Dissipation Total Device Dissipation Derate above 25°C (Per Device) (Total) Thermal Resistance Junction to Ambient Storage Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 2N3439 2N3440 450V 350V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C 300V 250V 7V 500mA 350mW 525mW 2mW / °C 3mW /°C 240°C/W –55 to 200°C Prelim. 2/98 2N3439DCSM 2N3440DCSM SEME LAB ELECTRICAL CHARACTERISTICS (per device) Parameter VCEO(sus)* (Tcase = 25°C unless otherwise stated) Test Conditions Min. Typ. Max. Unit Collector – Emitter Sustaining Voltage IC = 50mA 2N3439 350 (IB = 0) IC = 50mA 2N3440 250 Collector Cut-off Current VCE = 300V 2N3439 20 (IB = 0) VCE = 200V 2N3440 50 Collector Cut-off Current VCE = 450V 2N3439 500 (VBE = -1.5V) VCE = 300V 2N3440 500 Collector – Base Cut-off Current VCB = 360V 2N3439 20 (IE = 0) VCB = 250V 2N3440 20 IEBO* Emitter Cut-off Current (IC = 0) VEB = 6V VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA VBE(sat)* Base – Emitter Saturation Voltage IC = 50mA ICEO ICEX* ICBO* IC = 20mA hFE* VCE = 10V DC Current Gain IC = 2mA VCE = 10V V V µA µA 20 µA IB = 4mA 0.5 V IB = 4mA 1.3 V 160 — 2N3439 40 2N3440 30 — * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS Parameter (Tcase = 25°C unless otherwise stated) Test Conditions fT Transition Frequency IC = 10mA VCE = 10V f = 5MHz Cob Output Capacitance VCB = 10V IE = 0 f = 1.0MHz hfe Small Signal Current Gain Semelab plc. IC = 5mA VCE = 10V f = 1kHz Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Min. Typ. Max. Unit 15 MHz 10 pF 25 Prelim. 2/98