SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product (fT) • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 30V 15V 3V 40mA 200mW 1.14mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Max. Units 875 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6415 Issue 3 Page 1 of 3 SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols V(BR)CEO ICBO (1) Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = 3mA IB = 0 VCB = 15V IE = 0 10 TA = 150°C 1.0 VCB = 30V IE = 0 1.0 Collector-Cut-Off Current Min Typ Max 15 Units V nA µA ICES Collector-Cut-Off Current VCE = 16V IB = 0 100 nA IEBO Emitter-Cut-Off Current VEB = 3V IC = 0 10 µA IC = 3mA VCE = 1.0V 30 TA = -55°C 10 hFE Forward-current transfer ratio (1) VCE(sat) (1) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 150 IC = 10mA IB = 1.0mA 0.4 IC = 10mA IB = 1.0mA 1.0 IC = 5mA VCE = 6V V DYNAMIC CHARACTERISTICS Small signal forward-current (3) transfer ratio | hfe | 8.5 f = 100MHz IC = 10mA VCE = 10V 10.6 f = 100MHz hfe Small Signal Current Gain Ccb Collector – Base Feedback Capacitance rb’CC Gpe NF (2) (2)(3) (2) Collector Base Time Constant Small Signal Power Gain Noise Figure IC = 2mA VCE = 6V 50 f = 1.0KHz VCB = 10V 21 IE = 0 f = 1.0MHz IE = 2mA VCB = 6V 4 f = 31.9MHz VCE = 6V IC = 1.5mA f = 450MHz VCE = 6V IC = 1.5mA f = 450MHz RG = 50Ω 220 1.0 pF 15 ps 12.5 dB 4.5 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% (2) By design only, not a production test. (3) Case Lead Grounded Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 6415 Issue 3 Page 2 of 3 SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 MECHANICAL DATA Dimensions in mm (inches) 4.95 (0.195) 4.52 (0.178) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 4 3 1 2 TO-72 (TO-206AF) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Pin 3 – Collector Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 4 - Case Website: http://www.semelab-tt.com Document Number 6415 Issue 3 Page 3 of 3