SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A, 2N2222AC3B 2N2222AC3C • High Speed Saturated Switching • Hermetic LCC3 Ceramic package. • Variant B to MIL-PRF-19500/255 outline • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range TJ Tstg 75V 50V 6V 0.8A 500mW 2.86mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJA(1) Thermal Resistance, Junction To Ambient 325 °C/W Thermal Resistance Junction to Solder Pads 110 °C/W RθJSP(IS) (1) (2) (2) For non-thermal conductive PCB or unknown PCB surface mount conditions in free air. Infinite sink mount to PCB. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9192 Issue 1 Page 1 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A 2N2222AC3B 2N2222AC3C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions IC = 10mA ICES Collector-Emitter Sustaining Voltage Collector-Emitter Cut-Off Current ICBO Collector-Base Cut-Off Current (1) V(BR)CEO IEBO Emitter Cut-Off Current Min. IB = 0 Typ. Max. 50 VCE = 50V Units V 50 nA IE = 0 VCB = 75V 10 µA IE = 0 VCB = 60V 10 nA TA = 150°C 10 µA VEB = 4V 10 nA VEB = 6V 10 µA IC = 150mA IB = 15mA 0.3 IC = 500mA IB = 50mA 1.0 IC = 150mA IB = 15mA IC = 500mA IB = 50mA IC = 0.1mA VCE = 10V 50 IC = 1.0mA VCE = 10V 75 IC = 10mA VCE = 10V 100 TA = -55°C 35 IC = 0 ON CHARACTERISTICS VCE(Sat) (1) VBE(Sat) (1) hFE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain IC = 150mA IC = 500mA 0.6 1.2 V V 2.0 VCE = 10V (1) VCE = 10V (1) 100 325 300 30 SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10V IE = 0 f = 1.0MHz 8 Cibo Input Capacitance VEB = 0.5V IC = 0 f = 1.0MHz 25 IC = 20mA VCE = 20V f = 100MHz 2.5 - IC = 1.0mA VCE = 10V f = 1.0kHz 50 - |hfe| hfe Magnitude of smallsignal, short-circuit forward current transfer ratio Small Signal Current Gain pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9192 Issue 1 Page 2 of 3 SILICON SWITCHING NPN TRANSISTOR 2N2222AC3A 2N2222AC3B 2N2222AC3C SWITCHING CHARACTERISTICS Symbols Parameters Test Conditions ton Saturated Turn-on Time VCC = 30V toff Saturated Turn-off Time IC = 150mA Min. Typ. Max. Units 35 IB1 = 15mA ns 300 MECHANICAL DATA Dimensions in mm (inches) 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) 2 4 1 0.23 min. (0.009) 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) LCC3 (MO-041BA) Underside View Package Variant Table Variant A B C Pad 1 Collector Collector Collector Pad 2 N/C N/C Emitter Pad 3 Emitter Base N/C Pad 4 Base Emitter Base N/C = No Connection Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9192 Issue 1 Page 3 of 3