SILICON PLANAR PNP TRANSISTOR 2N1132 • High Speed Switching • Hermetic TO-39 Metal package. • Ideally suited for Small Signal General Purpose and Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at -50V -40V -5V -600mA 600mW 3.4mW/°C 2W 11.4mW/°C -65 to +200°C -65 to +200°C Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 292 °C/W Thermal Resistance, Junction To Case 87.5 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8069 Issue 1 Page 1 of 3 SILICON PLANAR PNP TRANSISTOR 2N1132 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (1) V(BR)CEO V(BR)CBO ICBO Parameters Test Conditions Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage IC = -10mA IB = 0 -40 IC = -10µA IE = 0 -50 VCB = -50V IE = 0 -10 VCB = -30V IE = 0 -1.0 TA = 150°C -100 Collector Cut-Off Current Min. Typ Max. V IEBO Emitter Cut-Off Current VEB = -5V IC = 0 -100 ICER Collector Cut-Off Current VCE = -50V RBE <= 10Ω -10 Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = -150mA IB = -15mA -1.3 IC = -150mA IB = -15mA -1.5 IC = -5mA VCE = -10V 25 IC = -150mA VCE = -10V 30 100 IC = -50mA VCE = -10V 3.0 20 (1) VCE(sat) VBE(sat) hFE (1) (1) Forward-current transfer ratio Units µA mA V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance f = 20MHz VCB = -10V IE = 0 45 f = 1.0MHz VEB = -0.5V pF IC = 0 Cibo Input Capacitance td Delay Time tr Rise Time IC = -150mA ts Storage Time IB1 = - IB2 = -15mA tf Fall Time 80 f = 1.0MHz 15 VCC = -30V 25 ns 80 25 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8069 Issue 1 Page 2 of 3 SILICON PLANAR PNP TRANSISTOR 2N1132 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8069 Issue 1 Page 3 of 3