SILICON NPN TRANSISTOR 2N3700 • High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Total Power Dissipation at TA = 25°C Derate Above TA = 25°C TC = 25°C Derate Above TC = 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 140V 80V 7.0V 1.0A 0.5W 2.9mW/°C 1.0W 5.7mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Unit Thermal Resistance, Junction To Ambient 350 °C/W Thermal Resistance, Junction To Case 175 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5266 Issue 2 Page 1 of 3 SILICON NPN TRANSISTOR 2N3700 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions V(BR)CEO Collector-Emitter Breakdown Voltage IC = 30mA IB = 0 IEBO Emitter-Base Cut-Off Current VEB = 7.0V IC = 0 10 VEB = 5.0V IC = 0 10 ICES Collector-Emitter Cut-Off Current (1) ICBO hFE Collector-Base Cut-Off Current (1) DC Current Gain (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Min. Typ. Max. 80 Unit V VCE = 90V 10 TA = 150°C 5 VCB = 140V IE = 0 10 IC = 0.10mA VCE = 10V 50 IC = 10mA VCE = 10V 90 IC = 150mA VCE = 10V 100 TA = -55°C 40 IC = 500mA VCE = 10V 50 IC = 1.0A VCE = 10V 15 IC = 150mA IB = 15mA 0.2 IC = 500mA IB = 50mA 0.5 IC = 150mA IB = 15mA 1.1 IC = 50mA VCE = 10V µA nA µA 300 V DYNAMIC CHARACTERISTICS |hfe| Magnitude of Small-Signal Short-Circuit Current Gain hfe Small-Signal Short-Circuit Current Gain Cobo Output Capacitance Cibo Input Capacitance 4 5 20 f = 20MHz IC = 1.0mA VCE = 5.0V f = 1.0KHz VCB = 10V 80 IE = 0 f = 1.0MHz VEB = 0.5V IC = 0 f = 1.0MHz 400 12 pF 60 pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 5266 Issue 2 Page 2 of 3 SILICON NPN TRANSISTOR 2N3700 MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 12.7 (0.500) min. 5.33 (0.210) 4.32 (0.170) 4.95 (0.195) 4.52 (0.178) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 1 2 TO18 (TO-206AA) METAL PACKAGE Underside View PIN 1 - Emitter PIN 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] PIN 3 - Collector Website: http://www.semelab-tt.com Document Number 5266 Issue 2 Page 3 of 3