SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM • Dual Silicon Planar NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Designed For General Purpose and Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD TJ Tstg Each Side Total Device 60V 40V 6V 200mA 500mW 600mW(1) 2.86mW/°C 3.43mW/°C -55 to +200°C -55 to +200°C Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range THERMAL PROPERTIES (Each Side) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 350 °C/W Notes (1) Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9009 Issue 1 Page 1 of 3 SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICBO Collector-Cut-Off Current VCB = 30V IE = 0 30 IEBO Emitter Cut-Off Current VEB = 3V IC = 0 30 V(BR)CBO Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage IC = 10µA 60 IC = 1.0mA 40 IE = 10µA 6 IC = 0.1mA 40 IC = 1.0mA 70 (2) V(BR)CEO V(BR)EBO hFE Forward-current transfer ratio (2) VBE(sat) (2) (2) VCE(sat) (2) VBE(f) Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Forward Base-Emitter Voltage IC = 10mA Min. VCE = 1.0V Typ 100 IC = 50mA 60 IC = 100mA 30 Max. 300 IB = 1.0mA IC = 50mA IB = 5mA 0.95 IC = 10mA IB = 1.0mA 0.2 IC = 50mA IB = 5mA 0.3 IB = 500mA nA V IC = 10mA 0.65 Units 0.85 V 1.45 IB = 200mA TA = 100°C IC = 10mA VCE = 20V 2 DYNAMIC CHARACTERISTICS fT Transition Frequency hfe Small-Signal Current Gain Cobo Output Capacitance 300 MHz f = 100MHz Cibo IC = 1.0mA NF 100 400 f = 1.0KHz VCB = 5V IE = 0 4 f = 1.0MHz Input Capacitance VEB = 0.5V pF IC = 0 8 f = 1.0MHz IC = 100 µA (3) VCE = 10V Noise Figure VCE = 5V RS = 1.0KΩ 5 dB f = 10Hz To 15.7KHz td Delay Time VCC = 3V VBE = 0.5V 35 tr Rise Time IC = 10mA IB1 = 1.0mA 35 ts Storage Time VCC = 3V IC = 10mA 200 tf Fall Time IB1 = IB2 = 1.0mA ns 50 Notes (2) Pulse Width ≤ 300us, δ ≤ 2% (3) By design only, not a production test. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9009 Issue 1 Page 2 of 3 SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM MECHANICAL DATA Dimensions in mm (inches) 3 2 1 4 A 6 0.23 rad. (0.009) 5 6.22 ± 0.13 (0.245 ± 0.005) 4.32 ± 0.13 (0.170 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9009 Issue 1 Page 3 of 3