SEME-LAB 2N3904DCSM

SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
•
Dual Silicon Planar NPN Transistors.
•
Hermetic Ceramic Surface Mount Package.
•
Designed For General Purpose and Switching Applications.
•
Screening Options Available.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Each Side
Total Device
60V
40V
6V
200mA
500mW
600mW(1)
2.86mW/°C 3.43mW/°C
-55 to +200°C
-55 to +200°C
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
THERMAL PROPERTIES (Each Side)
Symbols
Parameters
RθJA
Thermal Resistance, Junction To Ambient
Min.
Typ.
Max.
Units
350
°C/W
Notes
(1) Total device power dissipation limited by package.
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9009
Issue 1
Page 1 of 3
SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
ICBO
Collector-Cut-Off Current
VCB = 30V
IE = 0
30
IEBO
Emitter Cut-Off Current
VEB = 3V
IC = 0
30
V(BR)CBO
Collector-Base Breakdown
Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
IC = 10µA
60
IC = 1.0mA
40
IE = 10µA
6
IC = 0.1mA
40
IC = 1.0mA
70
(2)
V(BR)CEO
V(BR)EBO
hFE
Forward-current transfer
ratio
(2)
VBE(sat)
(2)
(2)
VCE(sat)
(2)
VBE(f)
Base-Emitter Saturation
Voltage
Collector-Emitter Saturation
Voltage
Forward Base-Emitter
Voltage
IC = 10mA
Min.
VCE = 1.0V
Typ
100
IC = 50mA
60
IC = 100mA
30
Max.
300
IB = 1.0mA
IC = 50mA
IB = 5mA
0.95
IC = 10mA
IB = 1.0mA
0.2
IC = 50mA
IB = 5mA
0.3
IB = 500mA
nA
V
IC = 10mA
0.65
Units
0.85
V
1.45
IB = 200mA
TA = 100°C
IC = 10mA
VCE = 20V
2
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
hfe
Small-Signal Current Gain
Cobo
Output Capacitance
300
MHz
f = 100MHz
Cibo
IC = 1.0mA
NF
100
400
f = 1.0KHz
VCB = 5V
IE = 0
4
f = 1.0MHz
Input Capacitance
VEB = 0.5V
pF
IC = 0
8
f = 1.0MHz
IC = 100 µA
(3)
VCE = 10V
Noise Figure
VCE = 5V
RS = 1.0KΩ
5
dB
f = 10Hz To 15.7KHz
td
Delay Time
VCC = 3V
VBE = 0.5V
35
tr
Rise Time
IC = 10mA
IB1 = 1.0mA
35
ts
Storage Time
VCC = 3V
IC = 10mA
200
tf
Fall Time
IB1 = IB2 = 1.0mA
ns
50
Notes
(2) Pulse Width ≤ 300us, δ ≤ 2%
(3) By design only, not a production test.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9009
Issue 1
Page 2 of 3
SILICON EPITAXIAL
DUAL NPN TRANSISTORS
2N3904DCSM
MECHANICAL DATA
Dimensions in mm (inches)
3
2
1
4
A
6
0.23 rad.
(0.009)
5
6.22 ± 0.13
(0.245 ± 0.005)
4.32 ± 0.13
(0.170 ± 0.005)
1.40 ± 0.15
(0.055 ± 0.006)
1.65 ± 0.13
(0.065 ± 0.005)
0.64 ± 0.06
(0.025 ± 0.003)
2.54 ± 0.13
(0.10 ± 0.005)
2.29 ± 0.20
(0.09 ± 0.008)
A = 1.27 ± 0.13
(0.05 ± 0.005)
LCC2 (MO-041BB)
Underside View
Pad 1 – Collector 1
Pad 2 – Base 1
Pad 3 – Base 2
Pad 4 – Collector 2
Pad 5 – Emitter 2
Pad 6 – Emitter 1
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Limited
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 9009
Issue 1
Page 3 of 3