SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A • High Voltage, Fast Switching. • Hermetic TO-254AA Isolated Metal Package. • Ideally suited for PWM Regulators, Power Supplies and Converter Circuits • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEX VCEO VEBO IC IB PD PD Collector – Base Voltage VBE = -1.5V Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C TJ Tstg Junction Temperature Range Storage Temperature Range 650V 650V 400V 8V 15A 5A 6W 34.3mW/°C 175W 1.0W/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters Max. Units RθJA Thermal Resistance, Junction To Ambient 29.16 °C/W RθJC Thermal Resistance, Junction To Case 1.0 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9199 Issue 1 Page 1 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols (1) V(BR)CEO ICEX Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = 20mA Collector Cut-Off Current Min. Typ Max. 400 V VCE = 400V VBE = -1.5V 500 VCE = 650V VBE = -1.5V 1.0 TA = 125°C 50 ICBO Collector Cut-Off Current VCB = 650V IE = 0 1.0 IEBO Emitter Cut-Off Current VEB = 8V IC = 0 2 IC = 15A IB = 3A 1.0 (1) VCE(sat) VBE(sat) hFE (1) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Forward-current transfer ratio TA = 125°C Units 2 IC = 15A IB = 3A IC = 1.0A VCE = 3V 15 40 IC = 15A VCE = 3V 8 20 ` TA = -55°C 4 IC = 1.0A VCE = 10V nA µA mA V 1.5 DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance td Delay Time IC = 15A tr Rise Time IB1 = 3A ts Storage Time IC = 15A tf Fall Time IB1 = -IB2 = 3A 3 10 150 500 f = 5MHz VCB = 10V IE = 0 f = 1.0MHz VCC = 200V 0.1 0.6 VCC = 200V pF µs 2.5 0.5 Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9199 Issue 1 Page 2 of 3 SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6678M3A MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 3.81 (0.150) BSC TO-254AA Pin 1 - Base Pin 2 - Collector Pin 3 - Emitter Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9199 Issue 1 Page 3 of 3