SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4238 • VCBO=80V(Min), VCEO=60V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB PD PD TJ Tstg Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Current Base Current TA = 25°C Total Power Dissipation at Derate Above 25°C TC = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 80V 60V 6V 1.0A 0.5A 1.0W 5.7mW/°C 6W 34mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA RθJC Min. Typ. Max. Units Thermal Resistance, Junction To Ambient 175 °C/W Thermal Resistance, Junction To Case 29 °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8368 Issue 1 Page 1 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4238 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols (1) V(BR)CEO ICEX Parameters Test Conditions Collector-Emitter Breakdown Voltage IC = 10mA IB = 0 VCE = 80V VBE = -1.5V VCE = 50V VBE = -1.5V Collector Cut-Off Current Min. Typ Max. 60 TA = 150°C Units V 100 nA 25 µA ICBO Collector Cut-Off Current VCB = 80V IE = 0 100 nA IEBO Emitter Cut-Off Current VEB = 6V IC = 0 0.5 mA IC = 100mA VCE = 1.0V 30 IC = 250mA VCE = 1.0V 30 TA = -55°C 15 IC = 500mA VCE = 1.0V 30 IC = 500mA IB = 50mA 0.3 IC = 1.0A IB = 0.1A 0.6 IC = 500mA IB = 50mA 1.0 IC = 1.0A IB = 0.1A 1.5 IC = 100mA VCE = 10V hFE Forward-current transfer ratio (1) (1) VCE(sat) VBE(sat) (1) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 150 V DYNAMIC CHARACTERISTICS | hfe | Small signal forward-current transfer ratio Cobo Output Capacitance 3.0 f = 10MHz VCB = 10V IE = 0 100 f = 1.0MHz pF Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8368 Issue 1 Page 2 of 3 SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4238 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) METAL PACKAGE Underside View Pin 1 - Emitter Pin 2 - Base Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Pin 3 - Collector Website: http://www.semelab-tt.com Document Number 8368 Issue 1 Page 3 of 3