SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM • Low Current / Low Voltage Transistor In A Dual Ceramic Hermetic Package • Designed For General Purpose Industrial Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VCBO VCEO VEBO IC ICM PD TJ Tstg Collector - Base Voltage Collector - Emitter Voltage Emitter – Base Voltage Continuous Collector Current Peak Collector Current TA = 25°C Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range Each Side Total Device -45V -45V -5V -200mA -200mA 350mW 500mW * 2mW/°C 2.9mW/°C -65 to +200°C -65 to +200°C THERMAL PROPERTIES (Each Side.) Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. Units 500 °C/W 150 °C/W * Total device power dissipation limited by package. Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8108 Issue 1 SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM ELECTRICAL CHARACTERISTICS (Each Side, TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions ICES Collector-Emitter Cut-Off Current VCE = -20V VCE = -45V VBE = 0 VBE = 0 IEBO Emitter-Base Cut-Off Current VEB = -5V IC = 0 VCE(sat)** Collector-Emitter Saturation Voltage IC = -10mA IC = -50mA IB = -1.0mA IB = -5mA VBE(sat)** Base-Emitter Saturation Voltage IC = -10mA IC = -50mA IB = -1.0mA IB = -5mA IC = -0.01mA IC = -0.1mA VCE = -1.0V VCE = -1.0V IC = -1.0mA IC = -10mA VCE = -1.0V VCE = -1.0V 100 IC = -50mA VCE = -1.0V 15 hFE** Forward-current transfer ratio Min. Typ. Max. Units -0.1 -10 µA 10 -0.25 -0.5 -0.6 -0.9 V -1.2 60 80 90 600 DYNAMIC CHARACTERISTICS IC = -0.1mA fT Transition Frequency VCE = -20V f = 10.7MHz IC = -10mA VCE = -20V f = 100MHz hfe Small-Signal Current Gain Cobo Output Capacitance Cibo NF Input Capacitance Noise Figure IC = -1.0mA VCE = -10V f = 1.0KHz IE = 0 15 MHz 250 100 VCB = -10V 6 f = 1.0MHz IC = 0 pF VEB = -1.0V 8 f = 1.0MHz IC = -0.1mA Rg = 2KΩ 400 VCE = -5V 2 dB 12 KΩ f = 10Hz To 10KHz hie Input Impedance hre Reverse Voltage Ratio hoe Output Admittance IC = -1.0mA VCE = -10V f = 1.0KHz IC = -1.0mA 2 VCE = -10V 20 -4 x 10 f = 1.0KHz IC = -1.0mA VCE = -10V f = 1.0KHz 10 60 µS ** Pulse Test: tp = 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8108 Issue 1 SILICON EPITAXIAL PNP TRANSISTOR BCY71DCSM Mechanical Data Dimensions in mm (inches) 3 2 1 4 A 6 0.23 rad. (0.009) 5 6.22 ± 0.13 (0.245 ± 0.005) 4.32 ± 0.13 (0.170 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) 1.65 ± 0.13 (0.065 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 2.54 ± 0.13 (0.10 ± 0.005) 2.29 ± 0.20 (0.09 ± 0.008) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Underside View Pad 1 – Collector 1 Pad 2 – Base 1 Pad 3 – Base 2 Pad 4 – Collector 2 Pad 5 – Emitter 2 Pad 6 – Emitter 1 Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab.co.uk Document Number 8108 Issue 1