2N5154XX MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) HIGH SPEED MEDIUM VOLTAGE SWITCH 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 DESCRIPTION 3 0.74 (0.029) 1.14 (0.045) The 2N5154XX is a silicon expitaxial planar NPN transistor in a TO-39 metal case for use in Switching and Linear applications. 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) Underside View Pin 1 = Base Pin 2 = Collector Pin = 3 – Emitter ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO Collector – Base Voltage (IE = 0) 100V VCEO Collector – Emitter Voltage (IB = 0) 80V VEBO Emitter – Base Voltage (IC = 0) 6V IC Continuous Collector Current 5A IC(PK) Peak Collector Current 10A IB Base Current 1A Ptot Total Dissipation at Tamb ≤ 25°C 1W Tcase ≤ 50°C 10W Tcase ≤ 100°C 6.7W Tstg Operating and Storage Temperature Range Tj Junction temperature –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5547 Issue 1 2N5154XX ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter ICES Collector Cut Off Current ICEV Collector Cut Off Current ICEO Collector Cut Off Current IEBO Emitter Cut Off Current VCEO(SUS)* Collector Emitter Saturation Voltage VCE(sat)* Collector Emitter Saturation Voltage VBE(sat)* Base Emitter Saturation Voltage VBE* Base Emitter Voltage hFE* Test Conditions Collector Base Capacitance hFE Small Signal Current Gain Typ. Max. Unit VCE = 60V VBE = 0 1 µA VCE = 100V VBE = 0 1 mA VCE = 60V Tcase = 150°C 500 VBE = -2V µA VCE = 40V IB = 0 50 VEB = 4V IC = 0 1 µA VEB = 5.5V IC = 0 1 mA IC = 100mA IB = 0 IC = 2.5A IB = 250mA 0.75 IC = 5A IB = 500mA 1.5 IC = 2.5A IB = 250mA 1.45 IC = 5A IB = 500mA 2.2 IC = 2.5A VCE = 5V 1.45 IC = 50mA VCE = 5V 50 IC = 2.5A VCE = 5V 60 25 IC = 5A Tc = -55°C VCE = 5V IE = 0 VCB = 10V DC Current Gain CCBO Min. 80 V 200 — 30 250 pF f = 1MHz IC = 0.1A VCE = 5V 50 VCE = 5v 3.5 f = 1KHz IC = 0.5A — f = 20MHz ton Turn On Time IC = 5A VCC = 30v IB1 = 0.5A toff Turn Off Time IC = 5A VCC = 30V IB1=-IB2 = 0.5A 0.5 µs 1.3 * Pulse test tp = 300µs , δ < 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5547 Issue 1