2N3439 2N3440 HIGH VOLTAGE NPN TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES • DUAL SILICON PLANAR EPITAXIAL NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. • HIGH VOLTAGE 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. APPLICATIONS: 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. 0.71 (0.028) 0.86 (0.034) 45° TO39 PACKAGE (TO-205AD) Pin 1 = Emitter Pin 2 = Base Pin 3 = Collector ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC IB Ptot Tstg Tj Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Base Current Total Power Dissipation at Tcase ≤ 25°C Tamb ≤ 50°C Storage Temperature Junction Temperature 2N3439 450V 350V 2N3440 300V 250V 7V 1A 0.5A 5W 1W –65 to 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3066 Issue: 1 2N3439 2N3440 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* Test Conditions Min. Typ. Max. Unit Collector – Emitter Sustaining Voltage IC = 50mA 2N3439 350 (IB = 0) IC = 50mA 2N3440 250 Collector Cut-off Current VCE = 300V 2N3439 20 (IB = 0) VCE = 200V 2N3440 50 Collector Cut-off Current VCE = 450V 2N3439 500 (VBE = -1.5V) VCE = 300V 2N3440 500 Collector – Base Cut-off Current VCB = 350V 2N3439 20 (IE = 0) VCB = 250V 2N3440 20 IEBO Emitter Cut-off Current (IC = 0) VEB = 6V VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA VBE(sat)* Base – Emitter Saturation Voltage IC = 50mA ICEO ICEX ICBO IC = 2mA VCE = 10V µA µA µA IB = 4mA 0.5 V IB = 4mA 1.3 V 160 — 40 VCE = 10V DC Current Gain µA 20 IC = 20mA hFE* V 2N3439 only 30 — * Pulse test tp = 300µs , δ ≤ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions fT Transition Frequency IC = 10mA Cob Output Capacitance VCB = 10V hfe Small Signal Current Gain IC = 5mA VCE = 10V f = 5MHz Min. Typ. 15 MHz 10 f = 1MHz VCE = 10V f = 1kHz Max. Unit 25 pF — THERMAL DATA Parameter RθJA RθJC Min. Typ. Max. Unit Thermal Resistance Junction to Ambient 175 °C/W Thermal Resistance Junction to Case 35 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3066 Issue: 1