2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 MECHANICAL DATA Dimensions in mm (inches) 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) COMPLEMENTARY SILICON POWER TRANSISTORS 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 2 2N6299SMD - PNP TRANSISTOR 2N6301SMD - NPN TRANSISTOR 9 .6 9 .3 1 1 .5 1 1 .2 7 (0 8 (0 8 (0 8 (0 .3 8 .3 6 .4 5 .4 4 1 ) 9 ) 6 ) 4 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD1 (TO-276AB) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter Designed for general purpose amplifier and low frequency switching applications. 7 .5 4 (0 .2 9 6 ) 0 .7 6 (0 .0 3 0 ) m in . 2 .4 1 (0 .0 9 5 ) 3 .1 7 5 (0 .1 2 5 ) M a x . 2 .4 1 (0 .0 9 5 ) 3 .0 5 (0 .1 2 0 ) 0 .1 2 7 (0 .0 0 5 ) FEATURES ! 5 .7 2 (.2 2 5 ) 1 0 .1 6 (0 .4 0 0 ) 0 .7 6 (0 .0 3 0 ) m in . • High DC Current Gain • Monolithic Construction with Built-in Base–Emitter Shunt Resistors 0 .1 2 7 (0 .0 0 5 ) 1 6 P L C S 0 .5 0 (0 .0 2 0 ) 0 .1 2 7 (0 .0 0 5 ) 7 .2 6 (0 .2 8 6 ) 0 .5 0 (0 .0 2 0 ) 0 .2 6 (0 .0 1 0 ) SMD05 (TO-276AA) Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter ABSOLUTE MAXIMUM RATINGS(Tcase = 25°C unless otherwise stated) VCEO VCBO VEBO IC Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Continuous Collector Current Peak IB PD TSTG , TJ Base Current Total Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range 80V 80V 5V 8A 16A 120mA 75W 0.428W/°C –65 to +200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2660 Issue 2 2N6299SMD 2N6301SMD 2N6299SMD05 2N6301SMD05 ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS VCEO(sus) Collector – Emitter Sustaining Voltage * IC = 100mA IB = 0 ICEO Collector Cut–off Current VCE = 40V IB = 0 ICEX Collector Cut–off Current IEBO Emitter Cut–off Current 80 V 0.5 VCE = Rated VCB VBE(off) = 1.5V 0.5 TC = 150°C 5.0 mA mA VBE = 5V IC = 0 VCE = 3V IC = 4A 750 VCE = 3V IC = 8A 100 Collector – Emitter Saturation IC = 4A IB = 16mA 2.0 Voltage* IC = 8A IB = 80mA 3.0 VBE(sat) Base – Emitter Saturation Voltage* IC = 8A IB = 80mA 4.0 V VBE(on) Base – Emitter On Voltage* VCE = 3V IC = 4A 2.8 V VCB = 10V IE = 0 200 pF 350 — 2 mA ON CHARACTERISTICS hFE VCE(sat) DC Current Gain* 18000 — V DYNAMIC CHARACTERISTICS Cob hfe hfe Output Capacitance f = 0.1MHz Magnitude of Common Emitter VCE = 3V Small Signal Short Circuit Current IC = 3A Transfer Ratio f = 1MHz Small Signal Current Gain* VCE = 3V 25 IC = 3A f = 1kHz 300 — Notes * Pulse test: tp = 300µs , Duty Cycle = 2% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2660 Issue 2