2N5322 2N5323 MECHANICAL DATA Dimensions in mm (inches) HIGH SPEED MEDIUM VOLTAGE SWITCHES 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) DESCRIPTION 12.70 (0.500) min. 0.89 max. (0.035) The 2N5322 and 2N5323 are silicon planar epitaxial PNP transistors in jedec TO-39 metal case intended for high voltage medium power applications in industrial and commercial equipment. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 The complementary NPN types are the 2N5320 and 2N5321 respectively 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 (TO-205AD) Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEV VCEO VEBO IC IB Ptot 2N5322 -100V -100V -75V -6V Collector – Base Voltage (IE = 0) Collector – Emitter Voltage (VBE = 1.5v) Emitter – Base Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Continuous Collector Current Base Current Total Dissipation at Tamb = 25°C Tcase = 50°C Storage and Junction temperature Tstg,Tj 2N5323 -75V -75V -50V -5V -1.2A -1A 1W 10W –65 to +200°C THERMAL DATA Rthj-case Thermal Resistance Junction-Case Max 17.5 °C/W Rthj-amb Thermal Resistance Junction-Ambient Max 175 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3073 Issue 2 2N5322 2N5323 ELECTRICAL CHARACTERISTICS FOR (Tcase = 25°C unless otherwise stated) Parameter ICBO Collector Cut Off Current IEBO Emitter Cut Off Current V(BR)CEV Test Conditions IE = 0 2N5322 VCB = -60V IE VEB = -5V IC = 0 2N5322 -0.1 VEB = -4V IC = 0 2N5323 -0.5 VBE = 1.5V IC = -0.1mA VCE(sat)* VBE* hFE* 2N5322 -100 2N5323 -75 2N5322 -75 2N5323 -50 2N5322 -6 2N5323 -5 µA V V V IB = -50mA Collector Emitter Saturation Voltage 2N5322 -0.7 2N5323 -1.2 V VCE = -4V Base Emitter Voltage 2N5322 -1.1 2N5323 -1.4 IC = -500mA VCE = -4V 30 IC = -1A VCE = -2V 10 DC Current Gain VCE = -4V V 130 — 2N5322 IC = -500mA µA IC = 0 Emitter Base Breakdown Voltage IC = -500mA -5 IB = 0 Collector-Emitter Breakdown Voltage IC = -500mA Max. Unit -0.5 = 0 2N5323 Collector Emitter Breakdown Voltage IE = -0.1mA V(BR)EBO Typ. VCB = -80V IC = -10mA V(BR)CEO* Min. 40 250 2N5323 fT Transistion Frequency ton Turn-On Time toff Turn Off Time IC = -50mA VCE = -4V IC = -500mA VCC = -30V IB1 = -50mA IC = -500mA VCC = -30V IB1=-IB2 = -50mA MHz 50 100 ns 1000 * Pulse test tp = 300µs , δ = 1 % Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3073 Issue 2