2N5338X 2N5339X SEME LAB NPN SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm (inches) 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) DESCRIPTION 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. The 2N5338X & 2N5339X silicon expitaxial planar NPN transistor in jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching circuit 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.66 (0.026) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO-39 Pin 1 – Emitter Pin 2 – Base Pin 3 – Collector ABSOLUTE MAXIMUM RATINGS TCASE = 25°c unless otherwise stated VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Collector – Base Voltage(IE = 0) Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IC = 0) Collector Current Collector Peak Current Base Current Total Dissipation at Tcase ≤ 25°C Tamb ≤ 25°C Storage Temperature Range Junction temperature 100V 100V 6V 5A 7A 1A 6W 1W –65 to +200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2674 Issue: 2 2N5338X 2N5339X SEME LAB THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 29.2 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 175 °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Max. Unit ICBO Collector Cut Off Current IE = 0 VCB = 100V 10 µA ICEX Collector Cut Off Current VBE = 1.5V VCE = 90V 10 µA 1 mA ICEO Collector Cut Off Current IB = 0 Tcase = 150°C VCE = 90V 100 µA VCEO(sus)* Collector Emitter Sustaining Voltage IB = 0 IC = 50mA 100 V IC = 2A IB = 0.2A 0.7 IC = 5A IB = 0.5A 1.2 IC = 2A IB = 0.2A 1.2 IC = 5A IB = 0.5A 1.8 IC = 0.5A 2N5338X 30 VCE = 2V 2N5339X 60 IC = 2A 2N5338X 30 150 VCE = 2V 2N5339X 60 240 IC = 5A 2N5338X 20 VCE = 2V 2N5339X 40 IC =0.5mA VCE = 10V 30 IE = 0 VCB = 10V VCE(sat)* Collector Emitter Saturation Voltage VBE(sat)* Base Emitter Voltage hFE* DC Current Gain fT Transistion Frequency CCBO Collector Base Capacitance ton Turn-on Time ts Storage Time IC = 2A tf Fall Time IB1 = - IB2 = 0.2A f = 0.1MHz IC = 2A VCC = 40V IB1 = 0.2mA VCC = 40V Min. Typ. V V — MHz 250 pF 200 ns 2.5 µs 200 ns * Pulse test tp = 300µs , Duty Cycle 1.5% Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2674 Issue: 2