N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 • VDSS = 60V , ID = 1.0A, RDS(ON) = 3.0Ω • • • Fast Switching Low Threshold Voltage (Logic Level) Low CISS • • • Integral Source-Drain Body Diode Hermetic Metal TO39 Package High Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS VGS ID IDM PD Drain – Source Voltage Gate – Source Voltage Continuous Drain Current (1) Pulsed Drain Current Total Power Dissipation at PD Total Power Dissipation at TJ Tstg Operating Temperature Range Storage Temperature Range 60V ±20V 1.0A 3.0A 5W 40mW/°C 725mW 5.8mW/°C -65 to +150°C -65 to +150°C TC = 25°C TC ≤ 25°C De-rate TC > 25°C TA ≤ 25°C De-rate TA > 25°C THERMAL PROPERTIES Symbols Parameters RθJC RθJA Min. Typ. Max. Units Thermal Resistance, Junction To Case 25 °C/W Thermal Resistance, Junction To Ambient 172 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8263 Issue 2 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 1.0µA 60 VDS = VGS ID = 1.0mA 0.8 TC = 125°C 0.3 VGS(th) Gate Threshold Voltage Min. Typ. Gate-Source Leakage Current IDSS Zero Gate Voltage Drain Current ID(ON)(2) On-State Drain Current RDS(on) (2) gfs VSD trr (2) (2) (2) Static Drain-Source On-State Resistance VGS = ±20V VGS = 0 Units V 2.0 V TC = -55°C IGSS Max. 2.5 VDS = 0V ±100 TC = 125°C ±500 VDS = 48V 1.0 TC = 125°C 100 VDS = 10V VGS = 10V VGS = 5V ID = 0.3A 5.0 VGS = 10V ID = 1.0A 3.0 TC = 125°C 5.6 1.5 Forward Transconductance VDS = 25V ID = 0.5A 170 Body Diode Forward Voltage VGS = 0 IS = 1.0A 0.7 Body Diode Reverse Recovery VGS = 0 IS = 1.0A nA µA A Ω mƱ 1.6 350 V ns DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 50 Coss Output Capacitance VDS = 25V 40 Crss Reverse Transfer Capacitance f = 1.0MHz 10 td(on) Turn-On Delay Time VDD = 25V 10 td(off) Turn-Off Delay Time ID = 1.0A RG = 50Ω Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com pF ns 10 Document Number 8263 Issue 2 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 2N6660 MECHANICAL DATA Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45° TO39 PACKAGE (TO-205AD) Pin 1 - Source Pin 2 - Gate Pin 3 / Case - Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8263 Issue 2 Page 3 of 3