SEME-LAB BFC12

SEME
BFC12
LAB
4TH GENERATION MOSFET
SOT–227 Package Outline.
Dimensions in mm (inches)
1 1 .8 (0 .4 6 3 )
1 2 .2 (0 .4 8 0 )
2
8 .9 (0 .3 5 0 )
9 .6 (0 .3 7 8 )
Hex Nut M 4
(4 places)
4 .8 (0 .1 8 7 )
H=
4 .9 (0 .1 9 3 )
(4 places)
R
4 .0 (0 .1 5 7 )
4 .2 (0 .1 6 5 )
4
0 .7 5 (0 .0 3 0 )
0 .8 5 (0 .0 3 3 )
2 5 .2 (0 .9 9 2 )
2 5 .4 (1 .0 0 0 )
1
W = 4 .1 (0 .1 6 1 )
4 .3 (0 .1 6 9 )
1 2 .6 (0 .4 9 6 )
1 2 .8 (0 .5 0 4 )
3 1 .5 (1 .2 4 0 )
3 1 .7 (1 .2 4 8 )
7 .8 (0 .3 0 7 )
8 .2 (0 .3 2 2 )
VDSS
ID(cont)
RDS(on)
3
3.3 (0 .1 2 9)
3.6 (0.14 3 )
R =
1 4 .9 (0.58 7 )
1 5 .1 (0.59 4 )
4 .0 (0 .1 57 )
(2 P lac e s)
5 .1 (0 .2 0 1 )
5 .9 (0 .2 3 2 )
1 .9 5 (0 .0 7 7 )
2 .1 4 (0 .0 8 4 )
3 0 .1 (1 .1 8 5 )
3 0 .3 (1 .1 9 3 )
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
ISOLATED
POWER MOSFETS
600V
38A
Ω
0.15Ω
3 8 .0 (1.4 9 6 )
3 8 .2 (1.5 0 4 )
Terminal 1 Source 2*
Terminal 3 Gate
Terminal 2
Terminal 4
Drain
Source 1
* Source 2 may be omitted,
shorted to Source 1 or used for
Gate drive circuit.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
600
V
ID
Continuous Drain Current
38
A
IDM , ILM
Pulsed Drain Current 1 and Inductive Current Clamped
152
A
VGS
Gate – Source Voltage
±30
V
Total Power Dissipation @ Tcase = 25°C
520
W
Linear Derating Factor
4.16
W / °C
PD
TJ , TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature : 0.063” from Case for 10 Sec.
–55 to 150
°C
300
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Test Conditions
VGS = 0V , ID = 250µA
Min.
600
Typ.
Max. Unit
BVDSS
Drain – Source Breakdown Voltage
ID(ON)
On State Drain Current 2
RDS(ON)
Drain – Source On State Resistance 2
VGS =10V , ID = 0.5 ID [Cont.]
0.15
Zero Gate Voltage Drain Current
VDS = VDSS
250
(VGS = 0V)
VDS = 0.8VDSS , TC = 125°C
1000
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS = VGS , ID = 2.5mA
4
V
IDSS
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
V
38
2
A
Ω
µA
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94
SEME
BFC12
LAB
DYNAMIC CHARACTERISTICS
Ciss
Characteristic
Input Capacitance
Test Conditions
VGS = 0V
Coss
Output Capacitance
Crss
Min.
Typ.
5540
Max. Unit
6500
VDS = 25V
1025
1450
Reverse Transfer Capacitance
f = 1MHz
375
570
Qg
Total Gate Charge3
VGS = 10V
242
370
Qgs
Gate – Source Charge
VDD = 0.5 VDSS
30
45
Qgd
Gate – Drain (“Miller”) Charge
ID = ID [Cont.] @ 25°C
118
175
td(on)
Turn–on Delay Time
VGS = 15V
15
30
tr
Rise Time
VDD = 0.5 VDSS
24
48
td(off)
Turn-off Delay Time
ID = ID [Cont.] @ 25°C
46
75
tf
Fall Time
RG = 0.6Ω
13
26
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Characteristic
Continuous Source Current (Body Diode)
Test Conditions
ISM
Pulsed Source Current1(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
IS = – ID [Cont.]
Qrr
Reverse Recovery Charge
dls / dt = 100A/µs
Min.
Typ.
Max. Unit
38
A
152
1.8
V
330
660
1200
ns
6
12
24
µC
Min.
Typ.
3
PACKAGE CHARACTERISTICS
LD
Characteristic
Internal Drain Inductance (Measured From Drain Terminal to Centre of Die)
LS
Internal Source Inductance (Measured From Source Terminals to Source Bond Pads)
VIsolation
RMS Voltage (50–60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
CIsolation
Drain-to-Mounting Base Capacitance
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations
Max. Unit
nH
5
2500
f = 1MHz
V
35
pF
13
in–lbs
THERMAL CHARACTERISTICS
RθJC
Characteristic
Junction to Case
RθCS
Case to Sink (Use High Efficiency Thermal Joint Compound and Planar Heat Sink Surface.)
Min.
Typ.
Max. Unit
0.24
°C/W
0.05
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/94