SML80B13F TO–247AD Package Outline. Dimensions in mm (inches) (0.185) (0.209) (0.059) (0.098) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) 6.15 (0.242) BSC 4.69 5.31 1.49 2.49 4.50 (0.177) M ax. 3.55 (0.140) 3.81 (0.150) 1 2 1.65 (0.065) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) VDSS 800V ID(cont) 13A RDS(on) 0.650W 3 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) Pin 1 – Gate 5.25 (0.215) BSC Pin 2 – Drain Pin 3 – Source D • • • • Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–247 Package StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 800 V ID Continuous Drain Current 13 A IDM Pulsed Drain Current 1 52 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 280 W Derate Linearly 2.24 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 13 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 –55 to 150 1210 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = mH, RG = 25W, Peak IL = 13A Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 11/99 SML80B13F STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250mA Zero Gate Voltage Drain Current VDS = VDSS (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS Min. 800 Typ. Max. Unit V 25 VDS > ID(ON) x RDS(ON) Max VGS = 10V 2 13 mA A VGS = 10V , ID = 0.5 ID [Cont.] 0.65 W DYNAMIC CHARACTERISTICS Characteristic Test Conditions Ciss Input Capacitance Coss Min. Typ. Max. Unit VGS = 0V 3050 3700 Output Capacitance VDS = 25V 300 420 Crss Reverse Transfer Capacitance f = 1MHz 140 225 Qg Total Gate Charge3 VGS = 10V 150 225 Qgs Gate – Source Charge VDD = 0.5 VDSS 17 25 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 70 105 td(on) Turn–on Delay Time VGS = 15V 12 24 tr Rise Time VDD = 0.5 VDSS 11 22 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 60 90 tf Fall Time 12 24 RG = 1.6W pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] dv / dt Peak Diode Recovery IS £ ID [cont] dI / dt = 100A/µs VDD £ VDSS VR = 200V TJ £ 150°C trr Reverse Recovery Time Qrr Reverse Recovery Charge Irrm Peak Recovery Current Semelab plc. Min. IS = – ID [Cont.] Typ. Max. Unit 13 A 52 1.3 V 5 V/ns RG = 2.0W 200 dI / dt = 100A/ms TJ = 25°C TJ = 125°C 350 IS = – ID [Cont.] 0.7 dl / dt = 100A/ms TJ = 25°C TJ = 125°C 1.8 IS = – ID [Cont.] TJ = 25°C 11 TJ = 125°C 17 dl / dt = 100A/ms Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk ns mC A 11/99 SML80B13F THERMAL CHARACTERISTICS RqJC RqJA Characteristic Junction to Case Min. Junction to Ambient Typ. Max. Unit 0.45 °C/W 40 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380mS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 11/99