SML50A21 TO–3 Package Outline. N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 VDSS 500V ID(cont) 21A Ω RDS(on) 0.220Ω 22.23 (0.875) max. 1.47 (0.058) 1.60 (0.063) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44) 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) Pin 1 – Gate Pin 2 – Source • Faster Switching • Lower Leakage • TO–3 Hermetic Package Case – Drain D G StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage 500 V ID Continuous Drain Current 21 A IDM Pulsed Drain Current 1 84 A VGS Gate – Source Voltage ±30 VGSM Gate – Source Voltage Transient ±40 Total Power Dissipation @ Tcase = 25°C 235 W Derate Linearly 1.88 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. 300 IAR Avalanche Current1 (Repetitive and Non-Repetitive) 21 EAR Repetitive Avalanche Energy 1 30 EAS Single Pulse Avalanche Energy 2 –55 to 150 1300 V °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5963 Issue 1 SML50A21 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Drain – Source Breakdown Voltage Test Conditions VGS = 0V , ID = 250μA Zero Gate Voltage Drain Current VDS = VDSS 25 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 250 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Min. 500 Typ. 2 Max. Unit V 21 μA A VGS = 10V , ID = 0.5 ID [Cont.] 0.220 Ω DYNAMIC CHARACTERISTICS Characteristic Test Conditions Ciss Input Capacitance Coss Min. Typ. Max. Unit VGS = 0V 3700 4440 Output Capacitance VDS = 25V 510 715 Crss Reverse Transfer Capacitance f = 1MHz 200 300 Qg Total Gate Charge3 VGS = 10V 150 225 Qgs Gate – Source Charge VDD = 0.5 VDSS 25 37 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 70 105 td(on) Turn–on Delay Time VGS = 15V 12 25 tr Rise Time VDD = 0.5 VDSS 10 20 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 50 75 tf Fall Time RG = 1.6Ω 8 15 pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS IS Characteristic Continuous Source Current Test Conditions (Body Diode) Min. Typ. Max. Unit 21 A 84 ISM Pulsed Source Current1 (Body Diode) VSD Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/μs 510 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/μs 10 μC 1.3 V THERMAL CHARACTERISTICS RθJC Characteristic Junction to Case RθJA Junction to Ambient Min. Typ. Max. Unit 0.53 °C/W 30 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2% 3) See MIL–STD–750 Method 3471 CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5963 Issue 1