SEME-LAB SML50A21_07

SML50A21
TO–3 Package Outline.
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
Dimensions in mm (inches)
25.15 (0.99)
26.67 (1.05)
6.35 (0.25)
9.15 (0.36)
1
1.52 (0.06)
3.43 (0.135)
2
VDSS
500V
ID(cont)
21A
Ω
RDS(on) 0.220Ω
22.23
(0.875)
max.
1.47 (0.058)
1.60 (0.063)
16.64 (0.655)
17.15 (0.675)
29.9 (1.177)
30.4 (1.197)
38.61 (1.52)
39.12 (1.54)
10.67 (0.42)
11.18 (0.44)
3
(case)
3.84 (0.151)
4.09 (0.161)
7.92 (0.312)
12.70 (0.50)
Pin 1 – Gate
Pin 2 – Source
• Faster Switching
• Lower Leakage
• TO–3 Hermetic Package
Case – Drain
D
G
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
S
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS
Drain – Source Voltage
500
V
ID
Continuous Drain Current
21
A
IDM
Pulsed Drain Current 1
84
A
VGS
Gate – Source Voltage
±30
VGSM
Gate – Source Voltage Transient
±40
Total Power Dissipation @ Tcase = 25°C
235
W
Derate Linearly
1.88
W/°C
PD
TJ , TSTG
Operating and Storage Junction Temperature Range
TL
Lead Temperature : 0.063” from Case for 10 Sec.
300
IAR
Avalanche Current1 (Repetitive and Non-Repetitive)
21
EAR
Repetitive Avalanche Energy 1
30
EAS
Single Pulse Avalanche Energy 2
–55 to 150
1300
V
°C
A
mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting TJ = 25°C, L = 5.90mH, RG = 25Ω, Peak IL = 21A
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5963
Issue 1
SML50A21
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
Characteristic
Drain – Source Breakdown Voltage
Test Conditions
VGS = 0V , ID = 250μA
Zero Gate Voltage Drain Current
VDS = VDSS
25
(VGS = 0V)
VDS = 0.8VDSS , TC = 125°C
250
IGSS
Gate – Source Leakage Current
VGS = ±30V , VDS = 0V
±100
nA
VGS(TH)
Gate Threshold Voltage
VDS = VGS , ID = 1.0mA
4
V
ID(ON)
On State Drain Current 2
RDS(ON)
Drain – Source On State Resistance 2
BVDSS
IDSS
VDS > ID(ON) x RDS(ON) Max
VGS = 10V
Min.
500
Typ.
2
Max. Unit
V
21
μA
A
VGS = 10V , ID = 0.5 ID [Cont.]
0.220
Ω
DYNAMIC CHARACTERISTICS
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
Min.
Typ.
Max. Unit
VGS = 0V
3700
4440
Output Capacitance
VDS = 25V
510
715
Crss
Reverse Transfer Capacitance
f = 1MHz
200
300
Qg
Total Gate Charge3
VGS = 10V
150
225
Qgs
Gate – Source Charge
VDD = 0.5 VDSS
25
37
Qgd
Gate – Drain (“Miller”) Charge
ID = ID [Cont.] @ 25°C
70
105
td(on)
Turn–on Delay Time
VGS = 15V
12
25
tr
Rise Time
VDD = 0.5 VDSS
10
20
td(off)
Turn-off Delay Time
ID = ID [Cont.] @ 25°C
50
75
tf
Fall Time
RG = 1.6Ω
8
15
pF
nC
ns
SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS
IS
Characteristic
Continuous Source Current
Test Conditions
(Body Diode)
Min.
Typ.
Max. Unit
21
A
84
ISM
Pulsed Source Current1
(Body Diode)
VSD
Diode Forward Voltage2
VGS = 0V , IS = – ID [Cont.]
trr
Reverse Recovery Time
IS = – ID [Cont.] , dls / dt = 100A/μs
510
ns
Qrr
Reverse Recovery Charge
IS = – ID [Cont.] , dls / dt = 100A/μs
10
μC
1.3
V
THERMAL CHARACTERISTICS
RθJC
Characteristic
Junction to Case
RθJA
Junction to Ambient
Min.
Typ.
Max. Unit
0.53
°C/W
30
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2%
3) See MIL–STD–750 Method 3471
CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed.
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: [email protected]
Website: http://www.semelab.co.uk
Document Number 5963
Issue 1