SML100C4 TO–254 Package Outline. Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 1 2 3 VDSS ID(cont) RDS(on) 0.89 (0.035) 1.14 (0.045) 1000V 3.6A 4.00W 3.81 (0.150) BSC 3.81 (0.150) BSC Pin 1 – Drain N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 2 – Source Pin 3 – Gate D • Faster Switching • Lower Leakage • TO–254 Hermetic Package G S ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS Drain – Source Voltage ID Continuous Drain Current 1000 V 3.6 A IDM Pulsed Drain Current 1 14.4 VGS Gate – Source Voltage ±30 V Total Power Dissipation @ Tcase = 25°C 125 W Derate Linearly 1.0 W/°C PD TJ , TSTG Operating and Storage Junction Temperature Range TL Lead Temperature : 0.063” from Case for 10 Sec. -55 to +150 °C 300 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. THERMAL CHARACTERISTICS Characteristic RqJC Junction to Case RqJA Junction to Ambient Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Min. Typ. Max. Unit 1.00 50 °C/W 6/99 SML100C4 STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated) Characteristic Test Conditions Min. Drain – Source Breakdown Voltage VGS = 0V , ID = 250µA 1000 Zero Gate Voltage Drain Current VDS = VDSS 250 (VGS = 0V) VDS = 0.8VDSS , TC = 125°C 1000 IGSS Gate – Source Leakage Current VGS = ±30V , VDS = 0V ±100 nA VGS(TH) Gate Threshold Voltage VDS = VGS , ID = 1.0mA 4 V ID(ON) On State Drain Current 2 RDS(ON) Drain – Source On State Resistance 2 BVDSS IDSS VDS > ID(ON) x RDS(ON) Max VGS = 10V Typ. Max. Unit V 2 3.6 µA A VGS = 10V , ID = 0.5 ID [Cont.] 4.00 W DYNAMIC CHARACTERISTICS Characteristic Test Conditions Min. CDC Drain to Case Capacitance f = 1MHz 15 22 Ciss Input Capacitance VGS = 0V 805 950 Coss Output Capacitance VDS = 25V 115 160 Crss Reverse Transfer Capacitance f = 1MHz 37 60 Qg Total Gate Charge VGS = 10V 35 55 Qgs Gate – Source Charge VDD = 0.5 VDSS 4.3 7 Qgd Gate – Drain (“Miller”) Charge ID = ID [Cont.] @ 25°C 18 27 td(on) Turn–on Delay Time VGS = 10V 10 20 tr Rise Time VDD = 0.5 VDSS 12 24 td(off) Turn-off Delay Time ID = ID [Cont.] @ 25°C 33 50 tf Fall Time 16 32 RG = 1.8W Typ. Max. Unit pF pF nC ns SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit IS Continuous Source Current (Body Diode) 3.6 ISM (Body Diode) 14.4 VSD Pulsed Source Current1 Diode Forward Voltage2 VGS = 0V , IS = – ID [Cont.] 1.3 V trr Reverse Recovery Time IS = – ID [Cont.] , dls / dt = 100A/µs 290 580 ns Qrr Reverse Recovery Charge IS = – ID [Cont.] , dls / dt = 100A/µs 1.65 3.3 µC A SAFE OPERATING AREA CHARACTERISTICS Characteristic Min. SOA1 Safe Operating Area VDS = 0.4VDSS , IDS = PD / 0.4VDSS , t = 1 Sec. 125 SOA2 Safe Operating Area IDS = ID [Cont.] , VDS = PD / ID [Cont.] , t = 1 Sec. 125 ILM Inductive Current Clamped 3.6 Typ. Max. Unit W A 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380µS , Duty Cycle < 2% CAUTION — Electrostatic Sensitive Devices. Anti-Static Procedures Must Be Followed. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 6/99