TetraFET D2018UK ROHS COMPLIANT METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED MECHANICAL DATA C B A ! D ( 2 p ls ) FEATURES • SIMPLIFIED AMPLIFIER DESIGN E • SUITABLE FOR BROAD BAND APPLICATIONS H G F • SIMPLE BIAS CIRCUITS DP PIN 1 SOURCE PIN 3 GATE DIM A B C D E F G H • LOW Crss PIN 2 DRAIN • LOW NOISE • HIGH GAIN – 10 dB MINIMUM mm 16.51 6.35 45° 1.52 6.35 0.13 3.56 0.64 Tol. 0.25 0.13 5° 0.13 0.13 0.03 0.51 0.13 Inches 0.650 0.250 45° 0.060 0.250 0.005 0.140 0.024 Tol. 0.010 0.005 5° 0.005 0.005 0.001 0.020 0.005 APPLICATIONS • VHF/UHF COMMUNICATIONS from 50 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 42W 65V ±20V 4A –65 to 150°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 3039 Issue 1 D2018UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. BVDSS Drain–Source Typ. Max. Unit V VGS = 0 ID = 10mA VDS = 28V VGS = 0 0.8 mA VGS = 20V VDS = 0 1 µA VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 7 V gfs Forward Transconductance* VDS = 10V ID = 0.8A GPS Common Source Power Gain PO = 10W η Drain Efficiency VDS = 28V IDSS IGSS Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current VSWR Load Mismatch Tolerance IDQ = 0.4A f = 1GHz 65 1 0.72 S 10 dB 40 % 20:1 — Ciss Input Capacitance VDS = 0 VGS = –5V f = 1MHz 48 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 24 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Thermal Resistance Junction – Case Max. 4.2°C / W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: [email protected] Document Number 3039 Issue 1