BUZ50A–220M BUZ50B–220M MECHANICAL DATA Dimensions in mm 10.6 (0.42) 4.6 (0.18) 16.5 (0.65) 0.8 (0.03) MOS POWER N-CHANNEL ENHANCEMENT MODE TRANSISTORS FEATURES 10.6 (0.42) 1.5(0.53) 3.70 Dia. Nom • HERMETIC TO220 ISOLATED METAL PACKAGE 1 2 3 12.70 (0.50 min) • CECC SCREENING OPTIONS • JAN LEVEL SCREENING OPTIONS APPLICATIONS: 1.0 (0.039) 2.54 (0.1) BSC 2.70 (0.106) Hermetically sealed version for high reliability power linear and switching applications TO220M (TO-257AB)- Isolated Metal Package Pin 1 – Gate Pin 2 – Drain Pin 3 – Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain – Source Voltage BUZ50A 1000V BUZ50B 1000V VGS Gate – Source Voltage ±20V ±20V ID Continious Drain Current 1.0A 1.5A IDM Maximum Pulsed Drain Current 4.0A 4.5A PD Total Power Dissipation at Tcase ≤ 25°C Tstg Storage Temperature Range Tj Operating Junction Temperature Range 75W –65°C To 200°C 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5541 Issue 1 BUZ50A–220M BUZ50B–220M ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Parameter BVDSS Drain – Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate – Body Leakage Current VGS(th)* Gate Threshold Voltage Test Conditions RDS(on)* Drain – Source On–State Resistance* Max. ID = 5.0mA VDS = 1000V VGS = 0V 0.25 TJ = 100°C 2.5 VGS = 20V VDS = 0 500 VDS = VGS ID = 1.0mA 2.0 4.5 TJ = 100°C 1.5 4.0 1000 V 10 VGS = 10V ID = 1.0A 12 VDS = 15V ID = 0.5A 0.5 S VGS = 10V ID = 0.5A 10 Ω VGS = 0 1200 Coss Output Capacitance VDS = 25V 300 Crss Reverse Transfer Capacitance f = 1MHz 80 td(on)* Turn–On Delay Time TJ = 100°C 50 tr* Rise Time ID = 0.5A 150 td(off)* Turn–Off Delay Time VDS = 125V 200 tf* Fall Time Rgen = 50Ω 100 SOURCE – DRAIN DIODE CHARACTERISTICS ton Forward Turn On Time trr Reverse Recovery Time nA TJ = 100°C Input Capacitance Diode Forward Voltage mA 5.0 Ciss VSD* Unit ID = 0.5A VDS(on)* Drain Source On Voltage Forward Transconductance Typ. VGS = 0 VGS = 10V gfs* Min. IS = 1.0A VGS = 0V V pF ns 39 1.0 250 420 V ns NOTE: *Pulsed : Pulse duration = 300 µs , duty cycle ≤ 2% THERMAL DATA RθJC Thermal Resistance Junction – Case 1.67 RθJA Thermal Resistance Junction – Ambient 75 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 5541 Issue 1