SILICON CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06Y • Hermetic Metal TO-257AA Package. • Semelab’s Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superb high temperature performance. • Suitable for high-frequency hard switching applications, where system efficiency and reliability are paramount. • No reverse recovery time due to absence of minority carrier injection. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VR VRRM IF IFRM IFSM PD DC Reverse Voltage Repetitive Peak Reverse Voltage DC Forward Current (TJ = 175°C) Repetitive Peak Forward Current Surge Peak Forward Current Total Power Dissipation at Derate Above 25°C Junction Temperature Range Storage Temperature Range 600V 600V 10A 67A 250A 100W 0.5W/°C -55 to +225°C -55 to +225°C (1) (2) TJ Tstg THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. Units 2.0 °C/W Notes (1) T = 25°C, T = 10ms, Half Sine Wave, D = 0.3 (2) T = 25°C, T = 10µs c p c p Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 9181 Issue 1 Page 1 of 2 SILICON CARBIDE (SiC) SCHOTTKY DIODE SML10SIC06Y ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated) Static Characteristics Symbols Parameters VF Forward Voltage IR Reverse Current Test Conditions Min. Typ. Max. IF = 10A 1.5 1.8 TJ = 175°C 2.0 2.4 VR = 600V 10 50 TJ = 175°C 20 200 Units V µA Dynamic Characteristics Qc C Total Capacitive Charge Total Capacitance VR = 600V, IF = 10A δi/δt = 500A/µs VR = 1.0V, f = 1.0MHz 480 VR = 200V, f = 1.0MHz 50 VR = 400V, f = 1.0MHz 42 25 nC pF MECHANICAL DATA Dimensions in mm (inches) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) 10.41 (0.410) 10.92 (0.430) 3.56 (0.140) Dia. 3.81 (0.150) 1 2 3 12.07 (0.500) 19.05 (0.750) 13.38 (0.527) 13.64 (0.537) 16.38 (0.645) 16.89 (0.665) 10.41 (0.410) 10.67 (0.420) 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC case 1 2 3 TO-257AA Pin 1 – Cathode Pin 2 – Cathode Pin 3 – Anode Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Case - Cathode Website: http://www.semelab-tt.com Document Number 9181 Issue 1 Page 2 of 2