N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE • Low RDS(on), VGS(th), CISS And Fast Switching Speeds • Hermetic TO-52 Metal package. • Ideally Suited For Power Supply Circuits, Switching And Driver (Relay, Solenoid, Lamp etc..) Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated) VDS VGS ID Drain – Source Voltage Gate – Source Voltage Continuous Drain Current IDM PD Pulsed Drain Current (1) Total Power Dissipation at 60V +15V, -0.3V 0.17A 0.11A 1.0A 312.5mW 2.5mW/°C -55 to +150°C -55 to +150°C TA = 25°C TA = 100°C TA = 25°C Derate Above 25°C TJ Tstg Operating Temperature Range Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient Min. Typ. Max. Units 400 °C/W Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Limited Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 1 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated) Symbols Parameters Test Conditions BVDSS Drain-Source Breakdown Voltage VGS = 0 ID = 100µA 60 VGS(th) Gate Threshold Voltage VDS = VGS ID = 1.0mA 0.8 IGSS Gate-Source Leakage Current VGS = 15V IDSS Zero Gate Voltage Drain Current VDS = 48V ID(ON)(2) On-State Drain Current RDS(on) (2) gfs (2) gos (2) Static Drain-Source On-State Resistance Min. Typ. Max. Units V 2.5 V VDS = 0V 100 nA VGS = 0 10 TJ = 125°C 500 VDS = 10V VGS = 10V VGS = 5V ID = 0.2A 7.5 VGS = 10V ID = 0.5A 5 TJ = 125°C 9 Forward Transconductance VDS = 10V ID = 0.5A Common Source Output Conductance VDS = 7.5V ID = 50mA 0.75 µA A Ω 100 mƱ 0.2 DYNAMIC CHARACTERISTICS Ciss Input Capacitance VGS = 0 60 Coss Output Capacitance VDS = 25V 25 Crss Reverse Transfer Capacitance f = 1.0MHz 5 td(on) Turn-On Delay Time VDD = 15V, RL= 23Ω, RG = 50Ω 10 td(off) Turn-Off Delay Time ID = 1.0A, VGEN = 10V 10 pF ns Notes (2) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 2 of 3 N-CHANNEL ENHANCEMENT MODE MOSFET VN10KE MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) ) 0 0 12.7 (0.500) 3.81 (0.150) min. 2.93 (0.115) ) 1 7 2 1 . . 0 0 ( ( 3 2 3 3 . . 5 4 ) 0 0 5 . . n 0.48 (0.019) 0.41 (0.016) dia. 0 i ( m 7 . 2 1 2.54 (0.100) Nom. 3 1 2 TO-52 PACKAGE (TO-206AC) Underside View Pin 1 - Source Pin 2 - Gate Pin 3 - Case & Drain Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number 8418 Issue 1 Page 3 of 3