STW25A60 SemiWell Semiconductor Bi-Directional Triode Thyristor Symbol ○ Features 2.T2 ▼▲ ◆ Repetitive Peak Off-State Voltage : 600V ◆ R.M.S On-State Current ( IT(RMS)= 25 A ) ○ 1.T1 ◆ High Commutation dv/dt 3.Gate ○ TO-3P General Description This device is suitable for AC switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching relay. 1 Absolute Maximum Ratings Symbol 2 3 ( TJ = 25°C unless otherwise specified ) Parameter Condition Ratings Units 600 V 25 A 225/250 A I2 t 260 A2 s Peak Gate Power Dissipation 5.0 W Average Gate Power Dissipation 0.5 W IGM Peak Gate Current 2.0 A VGM Peak Gate Voltage 10 V Operating Junction Temperature - 40 ~ 125 °C Storage Temperature - 40 ~ 150 °C 6.2 g VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current TC = 86 °C ITSM Surge On-State Current One Cycle, 50Hz/60Hz, Peak, Non-Repetitive I2 t PGM PG(AV) TJ TSTG Mass June, 2007. Rev. 1 1/5 Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved STW25A60 Electrical Characteristics Symbol Conditions Ratings Min. Typ. Max. Unit IDRM Repetitive Peak Off-State Current VD = VDRM, Single Phase, Half Wave TJ = 125 °C ─ ─ 5.0 mA VTM Peak On-State Voltage IT = 35 A, Inst. Measurement ─ ─ 1.4 V ─ ─ 30 ─ ─ 30 I+GT1 Ⅰ I -GT1 Ⅱ I -GT3 Ⅲ ─ ─ 30 V+GT1 Ⅰ ─ ─ 1.5 V-GT1 Ⅱ ─ ─ 1.5 V-GT3 Ⅲ ─ ─ 1.5 0.2 ─ ─ V 6 ─ ─ V/㎲ ─ 35 ─ mA ─ ─ 1.3 °C/W VGD (dv/dt)c IH Rth(j-c) 2/5 Items Gate Trigger Current Gate Trigger Voltage VD = 6 V, RL=10 Ω VD = 6 V, RL=10 Ω Non-Trigger Gate Voltage TJ = 125 °C, VD = 1/2 VDRM Critical Rate of Rise Off-State Voltage at Commutation TJ = 125 °C, [di/dt]c = -12.5 A/ms, VD=2/3 VDRM Holding Current Thermal Impedance Junction to case mA V STW25A60 Fig 1. Gate Characteristics Fig 2. On-State Voltage 3 10 VGM (10V) 1 On-State Current [A] PGM (5W) PG(AV) (0.5W) 25 ℃ 0 IGM (2A) Gate Voltage [V] 10 10 o TJ = 125 C 1 0 2 10 o TJ = 25 C 1 10 VGD (0.2V) -1 10 2 10 10 3 10 10 0.5 1.0 1.5 Power Dissipation [W] θ θ θ θ θ θ 2π θ 25 360° 20 θ : Conduction Angle o = 180 o = 150 o = 120 o = 90 o = 60 θ = 30 15 Allowable Case Temperature [ oC] 35 π o 10 5 0 0 5 10 15 2.5 3.0 3.5 Fig 4. On State Current vs. Allowable Case Temperature Fig 3. On State Current vs. Maximum Power Dissipation 30 2.0 On-State Voltage [V] Gate Current [mA] 20 25 130 120 110 100 θ = 30 2π o 360° 90 θ : Conduction Angle 0 5 10 o θ = 60 o θ = 90 o θ = 120 o θ = 150o θ = 180 θ 80 30 θ π 15 20 25 30 RMS On-State Current [A] RMS On-State Current [A] Fig 6. Gate Trigger Voltage vs. Junction Temperature Fig 5. Surge On-State Current Rating ( Non-Repetitive ) 10 280 200 120 50Hz o o 160 VGT (25 C) 60Hz VGT (t C) Surge On-State Current [A] 240 1 V V 80 V + GT1 _ GT1 _ GT3 40 0 0 10 1 10 Time (cycles) 2 10 0.1 -50 0 50 100 150 o Junction Temperature [ C] 3/5 STW25A60 Fig 7. Gate Trigger Current vs. Junction Temperature Fig 8. Transient Thermal Impedance 10 o o _ GT3 o IGT (t C) IGT (25 C) I Transient Thermal Impedance [ C/W] 10 1 I I + GT1 _ GT1 0.1 -50 0 50 100 1 0.1 -2 10 150 -1 0 10 o 1 10 10 Time (sec) Junction Temperature [ C] Fig 9. Gate Trigger Characteristics Test Circuit 10Ω 10Ω ▼▲ 6V ● 4/5 ▼▲ A V 10Ω RG 6V ● ▼▲ A V RG 6V ● A V ● ● ● Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ RG STW25A60 TO-3P Package Dimension corresponding symbol measurement A(mm) 15.60±0.20 A1(mm) 13.60±0.20 A2(mm)dia. 9.60±0.20 B(mm) 19.90±0.20 B1(mm) 13.90±0.20 B2(mm) 12.76±0.20 B3(mm) 3.80±0.20 C(mm) 20.00±0.30 C1(mm) 3.50±0.20 C2(mm) 16.50±0.30 D(mm) 5.45(TYP) D1 2.0 ±0.20 D2 3.0±0.20 D3 1.00±0.20 E(mm) 4.80±0.20 E1(mm) 1.50± +0.15 -0.05 E2(mm) 1.40±0.20 F(mm) 18.70±0.20 G(mm) φ(mm) 0.60 +0.15 -0.05 3.20±0.10 5/5