SKM150GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 232 A Tc = 80 °C 179 A 150 A ICnom ICRM SEMITRANS® 2 Fast IGBT4 Modules ICRM = 3xICnom 450 A -20 ... 20 V 10 µs -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A VGES tpsc VCC = 800 V VGE ≤ 15 V VCES ≤ 1200 V Tj = 150 °C Tj Inverse diode IF SKM150GAL12T4 Tj = 175 °C IFnom Features • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperaturecoefficient • High short circuit capability, selflimiting to 6 x ICNOM • Soft switching 4. Generation CALdiode (CAL4) Typical Applications* • • • • DC/DC – converter Brake chopper Switched reluctance motor DC – Motor IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tc = 25 °C 189 A Tc = 80 °C 141 A 150 A Tj Freewheeling diode IF Tj = 175 °C IFnom IFRM IFRM = 3xIFnom 450 A IFSM tp = 10 ms, sin 180°, Tj = 25 °C 900 A -40 ... 175 °C Tj Module It(RMS) Tterminal = 80 °C Tstg Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Visol AC sinus 50Hz, t = 1 min 200 A -40 ... 125 °C 4000 V Characteristics Symbol Conditions min. typ. max. Unit Tj = 25 °C 1.80 2.05 V Tj = 150 °C 2.20 2.40 V VCE0 Tj = 25 °C 0.8 0.9 V Tj = 150 °C 0.7 0.8 V rCE Tj = 25 °C 6.67 7.67 mΩ 10.00 10.67 mΩ 5.8 6.5 V 0.1 0.3 mA IGBT VCE(sat) IC = 150 A VGE = 15 V chiplevel VGE = 15 V VGE(th) VGE=VCE, IC = 6 mA ICES VGE = 0 V VCE = 1200 V Cies Coes Cres VCE = 25 V VGE = 0 V Tj = 150 °C 5 Tj = 25 °C Tj = 150 °C mA f = 1 MHz 9.3 nF f = 1 MHz 0.58 nF f = 1 MHz 0.51 nF QG VGE = - 8 V...+ 15 V 850 nC RGint Tj = 25 °C 5.0 Ω GAL © by SEMIKRON Rev. 2 – 23.06.2010 1 SKM150GAL12T4 Characteristics Symbol Conditions td(on) VCC = 600 V IC = 150 A VGE = ±15 V RG on = 1 Ω RG off = 1 Ω di/dton = 3400 A/µs di/dtoff = 1750 A/µs tr Eon td(off) tf Eoff SEMITRANS® 2 Fast IGBT4 Modules SKM150GAL12T4 rF • IGBT4 = 4. Generation (Trench)IGBT • VCEsat with positive temperaturecoefficient • High short circuit capability, selflimiting to 6 x ICNOM • Soft switching 4. Generation CALdiode (CAL4) Typical Applications* DC/DC – converter Brake chopper Switched reluctance motor DC – Motor Qrr Err Rth(j-c) rF Remarks • Case temperature limited to Tc = 125°C max, recomm. Top = -40 ... +150°C, product rel. results valid for Tj = 150° Qrr Err Rth(j-c) max. Unit 180 Tj = 150 °C 42 ns Tj = 150 °C 19.2 mJ Tj = 150 °C 410 ns Tj = 150 °C 72 ns Tj = 150 °C 15.8 mJ ns 0.19 K/W Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 2.38 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 5.6 6.4 mΩ 7.8 8.5 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3100 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per diode Freewheeling diode VF = VEC IF = 150 A VGE = 0 V chip VF0 IRRM typ. per IGBT Inverse diode VF = VEC IF = 150 A VGE = 0 V chip VF0 IRRM Features • • • • Rth(j-c) min. Tj = 150 °C 120 A 31.3 µC mJ 0.31 K/W Tj = 25 °C 2.14 2.46 V Tj = 150 °C 2.07 2.38 V Tj = 25 °C 1.3 1.5 V Tj = 150 °C 0.9 1.1 V Tj = 25 °C 5.6 6.4 mΩ 7.8 8.5 mΩ Tj = 150 °C IF = 150 A Tj = 150 °C di/dtoff = 3100 A/µs T = 150 °C j VGE = ±15 V Tj = 150 °C VCC = 600 V per Diode 120 A 31.3 µC 13 mJ 0.31 K/W 30 nH Module LCE RCC'+EE' terminal-chip Rth(c-s) per module Ms to heat sink M6 Mt TC = 25 °C 0.65 TC = 125 °C 1 0.04 to terminals M5 mΩ mΩ 0.05 K/W 3 5 Nm 2.5 5 Nm Nm w 160 g GAL 2 Rev. 2 – 23.06.2010 © by SEMIKRON SKM150GAL12T4 Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic © by SEMIKRON Rev. 2 – 23.06.2010 3 SKM150GAL12T4 Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode peak reverse recovery charge 4 Rev. 2 – 23.06.2010 © by SEMIKRON SKM150GAL12T4 SEMITRANS 2 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © by SEMIKRON Rev. 2 – 23.06.2010 5